**VBsemi BSS138LT3G-VB**. . **Detailed parameter description:**. - Type: N-Channel MOSFET. - Rated voltage ( VDS): 60V. - Maximum current (ID): 0.3A. - On-resistance (RDS(ON)): 2800mΩ @ VGS=10V, VGS=20V. - Threshold voltage (Vth ): 1.6V. - Package: SOT23. . **Application Introduction:**. This device is suitable for low power, small signal switching applications, especially in modules in the following fields Function: . . 1. **Signal switch:**. - Used for small signal switch modules, such as audio and data signal switching. . . 2. **Power switch:**. - In the low power power switch module, it is used to control the power switch. . . 3. **Sensor interface:**. - Used for sensor interface circuit to achieve efficient control of sensor signals. . . **Application fields:**. - Low power electronic equipment. - Signal switching and processing. - Sensor interface circuit. . * *Function:**. - Provide efficient switching control of small signals. - Achieve energy-saving control in low power systems. - Used for small signal switching applications. . **Usage Precautions:**. 1. Please operate according to the recommended working conditions in the data sheet. . 2. Pay attention to the specific value of the threshold voltage and ensure that this parameter is considered in the design. . 3. Make sure the current and voltage are within the specified range of the device to avoid damage to the device.
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