Model: BSS138K-VB.
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**Silk screen:** VB162K.
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**Brand:** VBsemi.
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**Parameters:**.
- Type: N-channel.
- Rated voltage (Vds): 60V.
- Maximum current (Id): 0.3A.
- Static drain-source resistance (RDS(ON )): 2800mΩ @ 10V, 3000mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.6V.
- Package: SOT23.
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**Product Introduction :**.
BSS138K-VB is an N-channel field effect transistor produced by VBsemi, suitable for various electronic applications, especially suitable for low power consumption and small size circuits. It has low drain-to-source resistance (RDS(ON)) and low current rating, making it suitable for applications requiring precise control. .
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**Key Features:**.
- Low Drain-Source Resistance: Features low static drain-source resistance (RDS(ON)), suitable for low power consumption application. .
- High rated voltage: The rated voltage (Vds) is 60V, making it suitable for various power supply voltage ranges. .
- Low Threshold Voltage: With lower threshold voltage (Vth), precise circuit control can be achieved. .
- SOT23 package: SOT23 package is very small and suitable for compact circuit design. .
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**Application fields:**.
BSS138K-VB is usually used in the following fields and modules: .
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1. **Low power electronic equipment:** Due to its low drain-source resistance and low threshold voltage, it is often used in low-power electronic devices such as portable devices, sensors, and battery-operated devices. .
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2. **Signal switch:** This model is also often used as a signal switch, such as switching circuits in analog and digital circuits, to achieve signal switching and control. .
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3. **Small power management:** BSS138K-VB can be used in small power management modules, such as battery charging and power selection. .
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4. **Sensor interface:** In the sensor interface circuit, it can be used to control the operation and data collection of the sensor. .
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Please note that specific application areas may vary depending on product usage, circuit design and specification requirements. When selecting and using this model, it is recommended that its suitability be determined based on the electrical characteristics and performance requirements of the specific application. This device is suitable for applications requiring compact size and low power consumption.