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FDMC6688P-VB Product details
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**You are designing a high-power-density power module, the PCB area is tight, yet it needs to handle tens of amperes of load current. Traditional P-channel MOS transistors either have high on-resistance or are too large in package. The VBsemi FDMC6688P-VB is designed for this – it integrates -20V withstand voltage, -52A current carrying capacity, and an on-resistance of only 4mΩ into a compact DFN8(3X3) package, allowing low-voltage, high-current designs without compromise.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -20V | -1.2V | -52A | 5(mΩ) | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -20V | -1.2V | -52A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -20V | -1.2V | -52A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | MOS |
- Voltage Rating -20V, combined with P-channel design, suitable for low-side load switch applications
- Gate drive range ±20V, compatible with various logic level drives
- Threshold voltage -1.2V, reliable turn-on with low-voltage control signals
- On-resistance 4mΩ (10V drive) / 5mΩ (4.5V drive), minimal losses
- Maximum current -52A, small package can still handle high current
- Trench process technology, excellent switching performance and conduction characteristics
**
Domain and module applications：
- **Battery Protection Board** – As a P-channel switch, low voltage drop, low heat generation, quickly disconnects the circuit during overcurrent or short circuit, protecting cell safety.
- **Load Switch/Power Rail Switching** – Utilizes -20V withstand voltage and ultra-low on-resistance for seamless main/backup power switching, reducing system voltage drop.
- **DC-DC Synchronous Rectification** – Replaces Schottky diodes in low-voltage, high-current Buck/Boost topologies, significantly improving conversion efficiency.
- **Power Tools/Motor Drives** – Adapts to high-rate discharge demands, low internal resistance ensures stability and runtime during high current output.
- **Type-C PD Fast Charging/Adapters** – Serves as the output switch, reducing power path losses, aiding higher power density designs.
- **Industrial/Communication Power Modules** – Compact DFN8 package, suitable for power stages in space-constrained yet high-reliability applications.
In a nutshell: The FDMC6688P-VB is not just an ordinary MOS transistor; it is the "low-loss switch" and "power density engine" for your low-voltage, high-current power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
