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NTMT150N65S3HF-VB Product details
Back to previous pageProduct introduction：
The VBsemi NTMT150N65S3HF-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand's high-voltage MOSFET product series. This product is manufactured using advanced SJ_Multi-EPI superjunction technology, featuring a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, combining high voltage tolerance with low on-resistance characteristics. The device operates within a gate-source voltage (VGS) range of ±30V and has a threshold voltage (Vth) of 3.5V, ensuring good switching characteristics and drive compatibility. It is packaged in a DFN8X8 package, offering excellent thermal performance and a compact footprint, suitable for high power density, high-reliability power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 160 mΩ
Maximum Drain Current (ID): 20A
Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
Package: DFN8X8
Domain and module applications：
1. Switching Power Supplies (SMPS): The NTMT150N65S3HF-VB is suitable for primary side switching circuits in high-performance switching power supplies, such as server power supplies, communication power supplies, and industrial power supplies, significantly reducing switching and conduction losses and improving conversion efficiency.
2. Power Factor Correction (PFC) Circuits: In Boost-type PFC topologies, this device can serve as the main switch, utilizing its 650V high voltage rating and low on-resistance to achieve high-efficiency power factor correction, suitable for high-power adapters and industrial power modules.
3. Photovoltaic Inverters and Energy Storage Systems: In photovoltaic DC-AC inverters and energy storage converters, this MOSFET can be used in DC-DC boost stages or inverter bridge arms, meeting the power conversion requirements of high voltage and high current, improving system reliability and power generation efficiency.
4. Motor Drives and Industrial Control: Suitable for power switch units in high-voltage motor drive modules, variable frequency drives, and servo drives, used for motor start/stop control and speed regulation, offering advantages of low losses and high switching speed.
5. Charging Piles and On-Board Power Supplies: In the power conversion modules of electric vehicle charging piles, this device can be used in AC-DC and DC-DC cascade circuits, providing stable high-voltage switching capability, supporting high-power fast charging applications; it can also be used in on-board auxiliary power systems.
6. High-Voltage DC-DC Converters: In scenarios such as high-voltage bus voltage conversion, communication base station power supply, and industrial isolated power supplies, this MOSFET can be used as a switching device for synchronous rectification or phase-shifted full-bridge circuits, ensuring high efficiency and miniaturized design of the converter.
7. LED Lighting Drives and High-Voltage Constant Current Control: Suitable for the high-voltage switching part of high-power LED lighting drive circuits, serving as the power switch in buck-boost converters, enabling precise current control and stable lighting output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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