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SISA24DN-T1-GE3-VB Product details
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The SISA24DN-T1-GE3-VB is a Single N-MOSFET deeply optimized for low-voltage, high-current power switching applications. The Trench technology achieves an excellent balance between ultra-low on-resistance and fast switching capability. The DFN8(3X3) package provides excellent thermal paths and a compact footprint. The combination of 20V voltage rating, 100A continuous current, and 2mΩ-level on-resistance makes it an ideal power device for battery protection, DC-DC converters, and high-density power modules, especially suitable for applications with stringent requirements on conduction losses and temperature rise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 20V | 0.6V | 100A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 20V | 0.6V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 20V | 0.6V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | MOS |
- VDS=20V: Adapts to 5V/12V low-voltage systems, providing sufficient margin for switching node spikes, reducing breakdown risk.
- VGS=±12V: Compatible with 1.8V~5V logic levels, can be directly driven by MCU/PMIC, simplifying peripheral drive circuits.
- Vth=0.6V (typical): Ultra-low threshold voltage ensures fast entry into the fully enhanced region under low-voltage drive conditions, suitable for battery voltage decay scenarios.
- RDS(on)=2.5mΩ @ VGS=4.5V / 2mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load power consumption and temperature rise, reducing heat sink design costs.
- ID=100A: Ample continuous current capability, can withstand high surge loads, suitable for power tools, power modules, and other high-current applications.
- Package DFN8(3X3): Low parasitic inductance and thermal resistance, supports high-frequency switching while saving PCB area, ideal for compact designs.
Domain and module applications：
(Value Analysis for Decision Making)
- Battery Protection Modules: Extremely low resistance reduces self-heating of the protection board; fast response ensures reliable shutdown during overcurrent/short circuit.
- DC-DC Converters: Significantly improves heavy-load efficiency in synchronous rectification applications; 2mΩ low resistance reduces losses, facilitating module miniaturization.
- Power Tools and Motor Drives: 100A high current margin handles stall and startup surges; low PWM switching losses, noticeably lower controller temperature rise.
- Portable Device Power Management: Low-voltage logic direct drive simplifies circuits; high efficiency extends battery life; small package fits ultra-thin designs.
- Server/Telecom Power Supplies: In high-density onboard power modules, ultra-low on-resistance and excellent thermal characteristics enhance power density and reliability.
- LED Lighting Drives: Low conduction drop reduces constant current source power consumption; supports high current parallel connection, improving overall luminaire efficiency.
Selection Summary: The SISA24DN-T1-GE3-VB, with its core advantages of 20V voltage rating, 100A current capability, and 2mΩ-level on-resistance, provides ultimate energy efficiency in low-voltage, high-current switching applications. It is particularly suitable for projects with strict requirements on heat dissipation, space, and dynamic response, representing a cost-effective power MOSFET selection solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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