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HT8KE5TB1-VB Product details
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The HT8KE5TB1-VB is a Dual N+N MOSFET optimized for medium-voltage power switching applications. Trench technology balances low conduction losses with high switching speed. The DFN8(3X3)-B package achieves a good balance between thermal performance and board space occupation. The combination of 100V withstand voltage, 12.1A current capability, and 71mΩ on-resistance makes it an ideal choice for telecom power supplies, industrial control, and automotive auxiliary systems, particularly suitable for high-density, high-reliability power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | 100V | 1.8V | 12.1A | 71(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | 100V | 1.8V | 12.1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | 100V | 1.8V | 12.1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | MOS |
VDS=100V: Suitable for 24V/48V/60V systems, providing ample margin for voltage spikes, significantly reducing avalanche breakdown risk, enhancing system robustness.
VGS=±20V: Compatible with 5V~12V logic levels, can be directly driven by MCU/PMIC, simplifying gate drive design and eliminating level-shifting circuits.
Vth=1.8V (typical): Reliable turn-on even under low-voltage drive conditions, suitable for wide input voltage range scenarios, enhancing drive flexibility.
RDS(on)=71mΩ @ VGS=10V: Low on-resistance reduces full-load power dissipation, effectively lowering PCB thermal design pressure, improving power density.
ID=12.1A: Ample continuous current margin to handle peak demands of various medium-power loads, supports parallel expansion.
Package DFN8(3X3)-B: Dual N+N integrated solution saves space, low parasitic parameters, supports high-frequency switching, while optimizing assembly cost and thermal resistance characteristics.
Domain and module applications：
Telecom Power Systems: 100V withstand voltage suits 48V bus architectures, low on-resistance improves DC-DC conversion efficiency, dual-transistor integration simplifies BOM design.
Motor Drive Control: Dual N+N structure suitable for half-bridge or full-bridge topologies, low PWM switching losses, smoother motor operation, controllable controller temperature rise.
Battery Protection and Charging Management: Fast switching characteristics ensure reliable protection during overcurrent/short circuit, low internal resistance reduces self-heating in the protection path, extending battery life.
Industrial Auxiliary Power Supplies: Wide voltage margin and high reliability suit harsh grid environments, DFN8 small package saves control board space, improving integration.
Automotive Electronic Systems: Compatible with 12V/24V/48V multi-voltage platforms, wide operating temperature range ensures stable operation in high-temperature environments like engine compartments.
Synchronous Rectification Circuits: Replaces Schottky diodes, significantly improves heavy-load efficiency, aiding power module miniaturization and high power density design.
Solar Inverter Auxiliary Power Supplies: Ample voltage margin, dual-transistor package facilitates building push-pull or forward topologies, reducing system cost.
Selection Summary: The HT8KE5TB1-VB, with its 100V withstand voltage, dual N+N integration, low on-resistance, and compact DFN8(3X3)-B package, achieves a balance of performance, space, and cost in medium-voltage power conversion. It is a cost-effective general-purpose choice for telecom, industrial, and automotive applications, especially suitable for projects with strict requirements on power density and thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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