FDMC8200-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | 16(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | 30V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-C | Half-Bridge-N+N | MOS |
Model: FDMC8200-VB
Brand: VBsemi
Configuration: Half-Bridge N+N (Dual N-Channel)
Voltage Rating: 30V
Gate Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (VGS=4.5V): 16 mΩ
On-Resistance (VGS=10V): 9 mΩ
Maximum Current: 35A
Package: DFN8(3X3)-C
Technology: Trench
Domain and module applications:
DC-DC Synchronous Rectification → Half-bridge structure, two transistors in one, small footprint, high efficiency
Low-Voltage High-Current Motor Drives → Power tools, drone ESCs, fast response, low heat generation
Power Management Modules → Point-of-load power supplies, VRMs, stable output, surge immunity
Battery Protection Circuits → Charge/discharge switching, low on-resistance reduces voltage drop, extends battery life
Smart Home & Industrial Control → Power switches, relay replacement, reliable switching, long lifespan
Automotive Auxiliary Power Supplies → Compact package, good temperature tolerance, adapts to harsh environments
Technical support:
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