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SICW080N120Y4-BP-VB Product details
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**The SICW080N120Y4-BP-VB is a high-voltage power switching device based on Silicon Carbide (SiC) technology, designed for high-efficiency, high-switching-frequency power conversion applications. It uses a TO247-4L package with an integrated Kelvin source structure, effectively reducing parasitic inductance in the gate drive loop, contributing to stable system operation. The combination of 1200V withstand voltage, 30A continuous current capability, and 80mΩ on-resistance provides significant replacement advantages in photovoltaic inverters, energy storage converters, charging stations, and high-voltage industrial power supplies, especially for projects with stringent efficiency and reliability requirements.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- **VDS=1200V**: Covers 400V~800V bus voltage applications, providing ample margin for voltage spikes, significantly enhancing system surge and avalanche capability.
- **VGS=-4V**: Supports negative voltage turn-off schemes, effectively suppressing false turn-on caused by high dv/dt, enhancing anti-interference capability in bridge topologies.
- **Vth=2~4V**: Reasonable threshold window balancing noise immunity and drive compatibility. Combined with the low-inductance Kelvin package, it enables fast and reliable switching.
- **RDS(on)=80mΩ @ VGS=18V**: Low on-resistance from SiC material significantly reduces full-load conduction losses, improves thermal performance, and enhances system efficiency.
- **ID=30A**: Ample continuous current margin, suitable for medium-to-high-power module design, meeting stringent overload and transient surge requirements.
- **Package TO247-4L**: Four pins including Kelvin source, separating power and drive loops, reducing switching losses, supporting high-frequency operation, while offering excellent thermal performance.
- **Technology SiC**: Wide bandgap material provides extremely low reverse recovery charge and temperature-stable characteristics, with switching losses significantly lower than Si devices of the same specification at high frequencies.
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Domain and module applications：
- **Photovoltaic Inverters**: Low conduction losses and fast switching characteristics improve MPPT and grid-tied efficiency; high-temperature operating capability adapts to harsh outdoor environments.
- **Energy Storage Converters (PCS)**: Efficient energy flow in bidirectional conversion; SiC's low switching losses help improve power density and system lifespan.
- **Electric Vehicle Charging Stations**: 1200V withstand voltage adapts to 800V high-voltage buses, reducing heat dissipation, decreasing charging module size, and improving fast-charging reliability.
- **High-Voltage DC-DC Converters**: Significantly reduces switching losses in LLC or phase-shifted full-bridge topologies, enabling higher operating frequencies and facilitating magnetic component miniaturization.
- **Three-Phase Motor Drives**: In high-voltage industrial motor control, low junction-to-case thermal resistance combined with negative voltage turn-off ensures stable operation under high dv/dt conditions.
- **Uninterruptible Power Supplies (UPS)**: Efficient AC-DC/DC-AC conversion reduces power losses; wide safe operating area ensures continuous power supply to critical loads.
- **Active Filters and SVG**: Fast switching capability improves harmonic compensation bandwidth; SiC's low stored charge reduces dead-time effects, optimizing power quality.
**Selection Summary**: The SICW080N120Y4-BP-VB, with its hard specifications of 1200V/30A/80mΩ, combined with the TO247-4L Kelvin package, achieves an ideal balance between efficiency, thermal management, and reliability in high-voltage, high-power systems. Compared to traditional silicon-based MOSFETs/IGBTs, its significantly reduced switching and conduction losses make it a high cost-performance, next-generation solution for efficient power conversion in new energy and industrial power fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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