中文
English
SCT025W120G3-4AG-VB Product details
Back to previous pageProduct introduction：
** Struggling with switching losses and heat dissipation challenges in high-voltage, high-power conversion? Let the VBsemi SCT025W120G3-4AG-VB break the deadlock! This SiC N-MOS transistor in a TO247-4L package, based on advanced SiC-S technology, boasts a breakdown voltage of 1200V, a continuous current capability of 60A, and an ultra-low on-resistance of just 40mΩ (at 18V drive). It features fast switching speeds and excellent reverse recovery characteristics, significantly reducing losses at high temperatures and frequencies. Whether for photovoltaic inverters, energy storage systems, or electric vehicle drives, it handles them with ease, making it the "efficiency flagship" for high-voltage, high-power applications.**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | 35(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 65A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- **Breakdown Voltage**: 1200V (covers high-voltage bus with ample margin)
- **Gate Drive**: -10V to rated range (compatible with industrial-grade gate drive solutions)
- **Turn-on Threshold**: 2~4V (concentrated threshold window, friendly for parallel current sharing)
- **Ultra-Low On-Resistance**: 40mΩ @ 18V (extremely low conduction losses, significantly improved temperature rise)
- **High Current Capability**: 60A (single device handles high power, simplifying parallel design)
- **Package**: TO247-4L (four-pin Kelvin source, small drive loop, faster switching speed)
- **Technology**: SiC-S (silicon carbide process, high-temperature tolerance, low losses, high reliability)
**
Domain and module applications：
– Six High-Voltage Scenarios, One Device Handles All**
- **Photovoltaic Inverters**: Efficient MPPT boost and inversion, improved system efficiency, smaller heatsink size
- **Energy Storage Power Conversion Systems (PCS)**: Bidirectional DC-DC and grid-tie conversion, high-frequency operation reduces magnetic component cost
- **Electric Vehicle Drive Controllers**: Main traction inverter bridge, stable operation across wide temperature range, aids range extension
- **Charging Stations / On-Board Power Supplies**: High-voltage DC-DC and OBC applications, fast switching reduces switching losses
- **Industrial Motor Drives**: High-power drives, strong overcurrent capability, excellent surge withstand performance
- **High-Voltage AC-DC Power Supplies**: Efficient PFC stage in server power supplies, medical power supplies, meeting stringent energy efficiency standards
SCT025W120G3-4AG-VB – With SiC power, high-voltage high-power design is more manageable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
