中文
English
TW048N65C-VB Product details
Back to previous pageProduct introduction：
**Are you designing a high-power-density industrial power supply where the switching transistor needs to withstand 650V while remaining cool under 40A of current? Traditional silicon-based MOSFETs either suffer from high conduction losses or lag in switching speed. The VBsemi TW048N65C-VB is designed precisely for this – it is based on 3rd generation SiC (Silicon Carbide) technology, integrating 650V withstand voltage, 40A current carrying capability, and an ultra-low on-resistance of only 50mΩ into a TO247 package, enabling a simultaneous leap in efficiency and reliability for high-voltage, high-power conversion.**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | 50(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 2~5 | 40A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 650V, meeting high-voltage bus and industrial margin requirements
- Gate drive allows -10V negative voltage, compatible with common SiC drive schemes for more reliable turn-off
- Threshold Voltage 2~5V, flexible drive design, compatible with various gate driver ICs
- On-Resistance 50mΩ (at VGS=18V), significantly lower conduction losses compared to similarly rated silicon devices
- Maximum Current 40A, TO247 package easily handles high-power thermal management
- Technology SiC, high-temperature resistance, low switching losses, enabling high-frequency design
**
Domain and module applications：
- **Photovoltaic Inverters** – As the main switch in boost or inverter stages, leveraging SiC's low reverse recovery and low loss characteristics to improve system conversion efficiency and reduce heatsink size.
- **Electric Vehicle Charging Stations / On-Board Power Supplies** – Operates stably under 650V bus voltage. High-frequency switching effectively reduces transformer size, achieving higher power density.
- **Energy Storage Converters (PCS)** – In bidirectional DC-DC and DC-AC topologies, the TW048N65C-VB's low on-resistance and high-temperature stability ensure efficient operation across all conditions.
- **Industrial Motor Drives** – Tolerates harsh grid fluctuations. Combined with -10V negative voltage turn-off capability, it increases dv/dt noise immunity margin and reduces the risk of false turn-on.
- **Server/Communication Power Supplies (LLC Resonant)** – When operating at frequencies above 200kHz, the extremely low switching losses of SiC easily allow efficiency to exceed 96%, helping data centers save energy.
- **Uninterruptible Power Supplies (UPS)** – Fast switching and high avalanche ruggedness ensure reliable switching under sudden load and surge conditions, protecting critical loads from power loss.
**In a nutshell: The TW048N65C-VB is not just an ordinary power transistor; it is the 'Silicon Carbide Engine' driving your high-voltage system towards an era of high efficiency, high density, and high reliability.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
