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IRF7507TRPBF-VB Product details
Back to previous pageProduct introduction：
The IRF7507TRPBF‑VB is a dual‑channel power MOSFET that integrates one N‑channel and one P‑channel device in a compact MSOP‑8 package. Manufactured with advanced Trench technology, it offers excellent switching performance and ultra‑low conduction losses while minimising PCB footprint – an ideal solution for systems that require both positive and negative voltage rails. The device withstands a drain‑source voltage (VDS) of ±30 V and a gate‑source voltage (VGS) of ±20 V, ensuring robust operation across a wide range of power applications. The threshold voltages (Vth) are specified at 1.6 V for the N‑channel and ‑1.75 V for the P‑channel, enabling direct drive from low‑voltage logic controllers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| MSOP8 | Dual N+P | ±30V | 1.6/-1.75V | 6A/-5A | 30/60(mΩ) | 22/45(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| MSOP8 | Dual N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| MSOP8 | Dual N+P | ±30V | 1.6/-1.75V | 6A/-5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| MSOP8 | Dual N+P | ±30V | 1.6/-1.75V | 6A/-5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| MSOP8 | Dual N+P |
Detailed parameter description:
- **Package**: MSOP8
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.6/-1.75V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 4.5V: 30/60(mΩ)
- RDS(ON) @ VGS = 10V: 22/45(mΩ)
- ** IDA**: 6A/-5A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
The IRF7507TRPBF‑VB is tailored for space‑constrained, high‑efficiency designs that require bidirectional or complementary switching. Its dual N+P channel configuration replaces two discrete MOSFETs, simplifying layout and reducing bill‑of‑materials cost.
Power Management Modules
DC‑DC converters – synchronous rectification and primary switching in buck/boost converters.
Load switches – precise power‑rail sequencing, hot‑swap, and inrush current limiting.
Battery management systems – charge/discharge protection and cell balancing in portable electronics.
Power banks – input/output path switching with ultra‑low voltage drop.
Motor Drive & Control
Brushed DC motor drivers – bi‑directional control using the complementary N/P pair.
Solenoid and relay drivers – efficient inductive load switching with fast freewheeling.
Industrial automation – actuator and valve control modules.
Consumer & Portable Electronics
Notebooks and tablets – power distribution and CPU/GPU power stages.
Smartphones and wearables – compact power management ICs and accessory detection circuits.
PCMCIA cards and peripheral devices – where board area is at a premium.
Industrial & Lighting Applications
Switched‑mode power supplies (SMPS) – primary side switching for AC‑DC adapters.
LED drivers – constant‑current regulation and PWM dimming circuits.
Inverter systems – small‑scale DC‑AC conversion for backup and auxiliary power.
With its high current capability (6A/-5A), extremely low RDS(on) (down to 22/45 mΩ at 10 V), and dual N+P channels in a tiny MSOP‑8 footprint, the IRF7507TRPBF‑VB delivers unmatched performance for next‑generation power designs. It is a direct upgrade over older dual‑MOSFETs that offer lower current and higher on‑resistance, making it the preferred choice for efficient, compact systems.
Technical support：
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