SWD3N80D-VB Product details
Product introduction:
SWD3N80D-VB is a high-performance single N-channel MOSFET in a TO252 package for high voltage applications. The MOSFET has a maximum drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 2A. The SWD3N80D-VB uses SJ_Multi-EPI technology to provide low on-resistance (2600mΩ@VGS=10V), high-efficiency current transfer and low power loss in high voltage applications.
The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for most common drive circuits. The SWD3N80D-VB is suitable for applications in inverters, power management systems, industrial power supplies and battery management, especially in environments with high demands such as high voltage, high current and high-efficiency power conversion.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Description** |
|------------------------|-------------------------------------------------|
| **Model** | SWD3N80D-VB |
| **Package Type** | TO252 |
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage (VDS)** | 800V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 2600mΩ@VGS=10V |
| **Maximum Drain Current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI |
| **Operating Temperature Range** | -55°C to +150°C |
| **Maximum power dissipation** | 25W (depending on operating conditions) |
| **Maximum junction temperature** | 150°C |
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Domain and module applications:
1. **Power conversion applications**
SWD3N80D-VB is widely used in high voltage power modules, DC-DC converters and AC-DC power converters, and can effectively convert high voltage power while maintaining low on-resistance and high efficiency. This makes this MOSFET particularly suitable for power supply equipment and industrial power modules.
2. **Inverter**
In applications such as solar inverters, UPS systems, and electric vehicle chargers, SWD3N80D-VB can convert DC power to AC power. Its high withstand voltage capability (800V) enables it to perform well when subjected to high voltage, ensuring efficient and stable operation of the system.
3. **Battery Management System (BMS)**
In the battery management system, SWD3N80D-VB is suitable for battery charge and discharge management, protection circuits, and power conversion. Due to its high voltage tolerance and low power loss characteristics, this MOSFET can significantly improve the efficiency of battery management systems and extend the battery life.
4. **Industrial Power Modules**
SWD3N80D-VB is widely used in various industrial power modules, especially in situations where high voltage support is required, such as industrial control systems, power transmission systems and power supply for heavy machinery and equipment. Its high voltage resistance and stability make it highly reliable in harsh working environments.
5. **Electric Vehicles and Battery Drive Systems**
In the battery drive systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs), SWD3N80D-VB can effectively control battery voltage and current, especially for high-voltage batteries and charging modules. Its low on-resistance and high current carrying capacity help reduce power loss and improve vehicle endurance and charging efficiency.
6. **Automotive Electronic Systems**
This MOSFET is also widely used in automotive electronic systems, especially in modules with high voltage requirements, such as electric power steering systems, on-board charging equipment and battery power systems. The high withstand voltage and low power loss of SWD3N80D-VB can improve the overall performance and stability of automotive electronic systems.
7. **High-frequency switching applications**
SWD3N80D-VB is suitable for high-frequency switching power supplies and power conversion modules in communication equipment. Its fast switching characteristics and low on-resistance help improve system efficiency, especially in applications at high frequencies.
8. **Power electronic equipment**
SWD3N80D-VB can also be used in various power electronic equipment such as inverters, servo drive systems, etc. These systems require high voltage tolerance, high-efficiency conversion and low power loss, and the characteristics of SWD3N80D-VB are very suitable for these application requirements.
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