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STG2507-VB Product details
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1. STG2507-VB Product Introduction
STG2507-VB is a dual-channel MOSFET in TSSOP8 package with a combination of N-channel and P-channel structures, suitable for high-efficiency power switching and control applications. Its maximum drain-source voltage (VDS) is -20V, suitable for low-voltage applications, and can work efficiently at lower voltages. The maximum drain current (ID) of this MOSFET is -7.5A, suitable for medium current loads. Its on-resistance (RDS(ON)) is 18mΩ @ VGS=4.5V and 13mΩ @ VGS=10V, respectively, indicating that it has very low switching loss and power loss, especially suitable for power supply designs that require high efficiency and low power consumption. STG2507-VB uses Trench technology, has excellent switching performance, low on-resistance and high efficiency, and is widely used in high-frequency switching power supplies, battery management and integrated circuits.
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STG2507-VB is a dual-channel MOSFET in TSSOP8 package with a combination of N-channel and P-channel structures, suitable for high-efficiency power switching and control applications. Its maximum drain-source voltage (VDS) is -20V, suitable for low-voltage applications, and can work efficiently at lower voltages. The maximum drain current (ID) of this MOSFET is -7.5A, suitable for medium current loads. Its on-resistance (RDS(ON)) is 18mΩ @ VGS=4.5V and 13mΩ @ VGS=10V, respectively, indicating that it has very low switching loss and power loss, especially suitable for power supply designs that require high efficiency and low power consumption. STG2507-VB uses Trench technology, has excellent switching performance, low on-resistance and high efficiency, and is widely used in high-frequency switching power supplies, battery management and integrated circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
2. STG2507-VB Detailed Parameter Description
| **Parameter Category** | **Parameter Value** | **Description** |
|---------------------|---------------------------|---------------------------------------------|
| **Package** | TSSOP8 | Compact package, suitable for high-density board layout|
| **Configuration** | Dual P+P-Channel | Dual MOSFET combination, suitable for efficient power control|
| **Drain-Source Voltage (VDS)** | -20V | Suitable for low-voltage applications, especially small power supplies and loads|
| **Gate-Source Voltage (VGS)** | ±20V | Supports a wide gate voltage range|
| **Throw-On Voltage (Vth)** | -1.2V | Standard turn-on voltage, suitable for a variety of gate drive circuits|
| **On-Resistance (RDS(ON))** | 18mΩ @ VGS=4.5V | Low on-resistance helps reduce power loss|
| | 13mΩ @ VGS=10V | Improved efficiency for higher voltage drive applications|
| **Maximum drain current (ID)** | -7.5A | Suitable for medium current load applications|
| **Technology** | Trench | Provides low on-resistance and high efficiency switching performance|
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| **Parameter Category** | **Parameter Value** | **Description** |
|---------------------|---------------------------|---------------------------------------------|
| **Package** | TSSOP8 | Compact package, suitable for high-density board layout|
| **Configuration** | Dual P+P-Channel | Dual MOSFET combination, suitable for efficient power control|
| **Drain-Source Voltage (VDS)** | -20V | Suitable for low-voltage applications, especially small power supplies and loads|
| **Gate-Source Voltage (VGS)** | ±20V | Supports a wide gate voltage range|
| **Throw-On Voltage (Vth)** | -1.2V | Standard turn-on voltage, suitable for a variety of gate drive circuits|
| **On-Resistance (RDS(ON))** | 18mΩ @ VGS=4.5V | Low on-resistance helps reduce power loss|
| | 13mΩ @ VGS=10V | Improved efficiency for higher voltage drive applications|
| **Maximum drain current (ID)** | -7.5A | Suitable for medium current load applications|
| **Technology** | Trench | Provides low on-resistance and high efficiency switching performance|
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Domain and module applications：
3. Application fields and modules
#### 1. **High-efficiency switching power supply**
STG2507-VB has very low on-resistance (13mΩ @ VGS=10V and 18mΩ @ VGS=4.5V), making it very suitable for high-efficiency switching power supply design. Low on-resistance helps reduce energy loss and improve system efficiency, and is suitable for DC-DC converters, AC-DC power modules, and power management units. Its dual P+P-Channel configuration provides extremely high flexibility, allowing efficient positive and negative voltage conversion and current transmission.
#### 2. **Battery Management System (BMS)**
STG2507-VB is also widely used in battery management systems, especially during battery charging and discharging. With a maximum drain-source voltage of -20V, this MOSFET is suitable for low-voltage working conditions and can withstand voltage fluctuations in the battery pack. Its dual-channel design can help provide efficient switching control while charging and discharging the battery, reducing battery loss and extending battery life.
#### 3. **Low Voltage Power Control**
The -20V maximum drain-source voltage of the STG2507-VB is ideal for low voltage applications such as portable devices, battery-powered systems, and low voltage consumer electronics. This MOSFET can efficiently manage power switching, power distribution, and other tasks in these devices, supporting high-efficiency conversion and regulation of various electronic modules.
#### 4. **Power Tools and Home Appliances**
This type of MOSFET can be used in power management modules in power tools, home appliances, and other devices. The dual P+P-Channel configuration can be used to control the flow of current and effectively improve the efficiency of the device. In these devices, the STG2507-VB can ensure that the required power is stably and efficiently provided during operation by optimizing power conversion.
#### 5. **Automotive Electronics**
The STG2507-VB can also be used in automotive electronic systems such as on-board battery management, electric vehicle charging systems, and automotive power supply modules. Its low voltage and high efficiency characteristics enable fast and efficient power switching and management in vehicle systems, thereby extending battery life and improving overall system efficiency.
### Summary
STG2507-VB is a high-performance, low-power dual P+P-Channel MOSFET suitable for a variety of low-voltage power management and switching applications. Its low on-resistance and dual-channel design give it broad application prospects in high-efficiency switching power supplies, battery management systems, and low-voltage electronic equipment. STG2507-VB uses Trench technology to provide excellent switching performance and is suitable for use in a variety of fields, such as high-efficiency power supplies, power tools, automotive electronics, etc.
#### 1. **High-efficiency switching power supply**
STG2507-VB has very low on-resistance (13mΩ @ VGS=10V and 18mΩ @ VGS=4.5V), making it very suitable for high-efficiency switching power supply design. Low on-resistance helps reduce energy loss and improve system efficiency, and is suitable for DC-DC converters, AC-DC power modules, and power management units. Its dual P+P-Channel configuration provides extremely high flexibility, allowing efficient positive and negative voltage conversion and current transmission.
#### 2. **Battery Management System (BMS)**
STG2507-VB is also widely used in battery management systems, especially during battery charging and discharging. With a maximum drain-source voltage of -20V, this MOSFET is suitable for low-voltage working conditions and can withstand voltage fluctuations in the battery pack. Its dual-channel design can help provide efficient switching control while charging and discharging the battery, reducing battery loss and extending battery life.
#### 3. **Low Voltage Power Control**
The -20V maximum drain-source voltage of the STG2507-VB is ideal for low voltage applications such as portable devices, battery-powered systems, and low voltage consumer electronics. This MOSFET can efficiently manage power switching, power distribution, and other tasks in these devices, supporting high-efficiency conversion and regulation of various electronic modules.
#### 4. **Power Tools and Home Appliances**
This type of MOSFET can be used in power management modules in power tools, home appliances, and other devices. The dual P+P-Channel configuration can be used to control the flow of current and effectively improve the efficiency of the device. In these devices, the STG2507-VB can ensure that the required power is stably and efficiently provided during operation by optimizing power conversion.
#### 5. **Automotive Electronics**
The STG2507-VB can also be used in automotive electronic systems such as on-board battery management, electric vehicle charging systems, and automotive power supply modules. Its low voltage and high efficiency characteristics enable fast and efficient power switching and management in vehicle systems, thereby extending battery life and improving overall system efficiency.
### Summary
STG2507-VB is a high-performance, low-power dual P+P-Channel MOSFET suitable for a variety of low-voltage power management and switching applications. Its low on-resistance and dual-channel design give it broad application prospects in high-efficiency switching power supplies, battery management systems, and low-voltage electronic equipment. STG2507-VB uses Trench technology to provide excellent switching performance and is suitable for use in a variety of fields, such as high-efficiency power supplies, power tools, automotive electronics, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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