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STB130NH02LT4-VB Product details
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STB130NH02LT4-VB Product Introduction
**STB130NH02LT4-VB** is a high-efficiency single N-channel MOSFET in a **TO263** package, designed for high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for low-voltage, high-current switching control applications. This MOSFET has an extremely low on-resistance (RDS(ON)) of 2.7mΩ (at VGS=4.5V) and 2.4mΩ (at VGS=10V), which can significantly reduce energy loss and improve system efficiency. The maximum drain current (ID) is 98A, making it an excellent performer in applications requiring high current and high efficiency. Using **Trench technology**, the STB130NH02LT4-VB provides excellent switching performance and low power loss, making it ideal for high-performance power management and power regulation systems.
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**STB130NH02LT4-VB** is a high-efficiency single N-channel MOSFET in a **TO263** package, designed for high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for low-voltage, high-current switching control applications. This MOSFET has an extremely low on-resistance (RDS(ON)) of 2.7mΩ (at VGS=4.5V) and 2.4mΩ (at VGS=10V), which can significantly reduce energy loss and improve system efficiency. The maximum drain current (ID) is 98A, making it an excellent performer in applications requiring high current and high efficiency. Using **Trench technology**, the STB130NH02LT4-VB provides excellent switching performance and low power loss, making it ideal for high-performance power management and power regulation systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
STB130NH02LT4-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, suitable for high power applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for efficient switching systems requiring a single control channel. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, suitable for low voltage control applications, providing efficient current switching function. |
| **Gate-Source Voltage (VGS)** | ±20V | The maximum gate-source voltage can reach ±20V, adapting to different control voltage requirements. |
| **Turn-On Threshold Voltage (Vth)** | 1.7V | The turn-on threshold voltage is 1.7V, ensuring that the MOSFET is turned on quickly under appropriate control voltage. |
| **On-resistance (RDS(ON))** | 2.7mΩ @ VGS=4.5V | At VGS=4.5V, the on-resistance is 2.7mΩ, providing very low power loss and suitable for high current applications. |
| **On-resistance (RDS(ON))** | 2.4mΩ @ VGS=10V | At VGS=10V, the on-resistance is 2.4mΩ, further reducing power consumption in current transmission. |
| **Maximum drain current (ID)** | 98A | The maximum drain current is 98A, suitable for high current applications and capable of carrying larger loads. |
| **Technology type** | Trench | Using Trench technology, it provides low on-resistance and efficient switching performance, suitable for high current switch control applications. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, suitable for high power applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for efficient switching systems requiring a single control channel. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, suitable for low voltage control applications, providing efficient current switching function. |
| **Gate-Source Voltage (VGS)** | ±20V | The maximum gate-source voltage can reach ±20V, adapting to different control voltage requirements. |
| **Turn-On Threshold Voltage (Vth)** | 1.7V | The turn-on threshold voltage is 1.7V, ensuring that the MOSFET is turned on quickly under appropriate control voltage. |
| **On-resistance (RDS(ON))** | 2.7mΩ @ VGS=4.5V | At VGS=4.5V, the on-resistance is 2.7mΩ, providing very low power loss and suitable for high current applications. |
| **On-resistance (RDS(ON))** | 2.4mΩ @ VGS=10V | At VGS=10V, the on-resistance is 2.4mΩ, further reducing power consumption in current transmission. |
| **Maximum drain current (ID)** | 98A | The maximum drain current is 98A, suitable for high current applications and capable of carrying larger loads. |
| **Technology type** | Trench | Using Trench technology, it provides low on-resistance and efficient switching performance, suitable for high current switch control applications. |
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Domain and module applications：
STB130NH02LT4-VB Application Fields and Modules
#### 1. **Power Supply and Power Management**
**Application Scenarios:** STB130NH02LT4-VB can be widely used in power supply systems, especially power management modules that require high current and low power consumption.
**Features and Advantages:** The low on-resistance (RDS(ON) = 2.4mΩ) of this MOSFET makes it very suitable for efficient power regulation and power conversion, especially in power management systems, which can reduce energy loss and improve system efficiency.
#### 2. **DC-DC Converter**
**Application Scenarios:** In DC-DC converters, STB130NH02LT4-VB is used as a switching element for efficient voltage conversion.
**Features and Advantages:** Due to its low on-resistance and high current carrying capacity, STB130NH02LT4-VB can improve the efficiency of the converter, support large current transmission and reduce energy loss.
#### 3. **Power tools and battery management systems**
**Application scenarios:** In power tools and battery management systems, the STB130NH02LT4-VB can be used for efficient control of battery charging and discharging.
**Features and advantages:** This MOSFET can provide a current carrying capacity of up to 98A, which is very suitable for power tools and battery management systems that require high current and high efficiency, and can achieve longer service life and more efficient energy conversion.
#### 4. **Electric vehicle (EV) drive system**
**Application scenarios:** In the drive system of electric vehicles, the STB130NH02LT4-VB can be used for motor control and energy transmission.
**Features and advantages:** Its low RDS(ON) and high current carrying capacity make it very suitable for current regulation and power management in electric vehicle drive systems, ensuring efficient operation of electric vehicles and battery efficiency.
#### 5. **Communication equipment power management**
**Application scenarios:** STB130NH02LT4-VB can also be used for power management in communication equipment to provide stable and reliable power supply.
**Features and advantages:** In communication systems, efficient power conversion is essential to ensure signal stability and equipment operation. STB130NH02LT4-VB can help reduce energy loss and improve equipment reliability.
#### 6. **High-frequency switching power supply (SMPS)**
**Application scenarios:** In high-frequency switching power supply systems (SMPS), STB130NH02LT4-VB can be used for current switching.
**Features and advantages:** The low on-resistance and high current carrying capacity of this MOSFET enable it to efficiently perform high-frequency current switching. It is widely used in various power modules and power electronic equipment, providing lower power loss and efficient power transmission.
#### 7. **Audio amplifier power supply**
**Application scenarios:** In the audio amplifier power supply system, the STB130NH02LT4-VB can be used as a current regulation switch to ensure stable power output.
**Features and advantages:** Due to its high current capability and low power consumption, this MOSFET can provide efficient current control, reduce interference and noise, and ensure optimal performance of audio equipment when used in audio amplifiers.
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**STB130NH02LT4-VB** As a low-voltage and high-current N-channel MOSFET, it is widely used in power supply, battery management, power tools, drive systems and other fields. Its extremely low on-resistance and high current capability enable it to significantly improve system efficiency, reduce energy loss, and provide stable power management in these applications to meet applications with high efficiency and high power requirements.
#### 1. **Power Supply and Power Management**
**Application Scenarios:** STB130NH02LT4-VB can be widely used in power supply systems, especially power management modules that require high current and low power consumption.
**Features and Advantages:** The low on-resistance (RDS(ON) = 2.4mΩ) of this MOSFET makes it very suitable for efficient power regulation and power conversion, especially in power management systems, which can reduce energy loss and improve system efficiency.
#### 2. **DC-DC Converter**
**Application Scenarios:** In DC-DC converters, STB130NH02LT4-VB is used as a switching element for efficient voltage conversion.
**Features and Advantages:** Due to its low on-resistance and high current carrying capacity, STB130NH02LT4-VB can improve the efficiency of the converter, support large current transmission and reduce energy loss.
#### 3. **Power tools and battery management systems**
**Application scenarios:** In power tools and battery management systems, the STB130NH02LT4-VB can be used for efficient control of battery charging and discharging.
**Features and advantages:** This MOSFET can provide a current carrying capacity of up to 98A, which is very suitable for power tools and battery management systems that require high current and high efficiency, and can achieve longer service life and more efficient energy conversion.
#### 4. **Electric vehicle (EV) drive system**
**Application scenarios:** In the drive system of electric vehicles, the STB130NH02LT4-VB can be used for motor control and energy transmission.
**Features and advantages:** Its low RDS(ON) and high current carrying capacity make it very suitable for current regulation and power management in electric vehicle drive systems, ensuring efficient operation of electric vehicles and battery efficiency.
#### 5. **Communication equipment power management**
**Application scenarios:** STB130NH02LT4-VB can also be used for power management in communication equipment to provide stable and reliable power supply.
**Features and advantages:** In communication systems, efficient power conversion is essential to ensure signal stability and equipment operation. STB130NH02LT4-VB can help reduce energy loss and improve equipment reliability.
#### 6. **High-frequency switching power supply (SMPS)**
**Application scenarios:** In high-frequency switching power supply systems (SMPS), STB130NH02LT4-VB can be used for current switching.
**Features and advantages:** The low on-resistance and high current carrying capacity of this MOSFET enable it to efficiently perform high-frequency current switching. It is widely used in various power modules and power electronic equipment, providing lower power loss and efficient power transmission.
#### 7. **Audio amplifier power supply**
**Application scenarios:** In the audio amplifier power supply system, the STB130NH02LT4-VB can be used as a current regulation switch to ensure stable power output.
**Features and advantages:** Due to its high current capability and low power consumption, this MOSFET can provide efficient current control, reduce interference and noise, and ensure optimal performance of audio equipment when used in audio amplifiers.
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**STB130NH02LT4-VB** As a low-voltage and high-current N-channel MOSFET, it is widely used in power supply, battery management, power tools, drive systems and other fields. Its extremely low on-resistance and high current capability enable it to significantly improve system efficiency, reduce energy loss, and provide stable power management in these applications to meet applications with high efficiency and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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