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SPB80N04S2L-03-VB Product details
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1. Product Introduction
**SPB80N04S2L-03-VB** is a single N-channel MOSFET in TO263 package, designed for high-efficiency power conversion and power control. It has a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 150A, suitable for high-current switching applications. The gate-source voltage (VGS) of this MOSFET is ±20V, with a wide operating voltage range, which can meet various power management and control requirements. Its on-resistance (RDS(ON)) is very low, 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, which makes it have very low power loss when working at high current, significantly improving the efficiency of the overall system. SPB80N04S2L-03-VB is designed with Trench technology, which provides higher switching speed, lower conduction loss, and ensures high current handling capability. It is widely used in power management, electric vehicles, DC-DC converters and other fields.
**SPB80N04S2L-03-VB** is a single N-channel MOSFET in TO263 package, designed for high-efficiency power conversion and power control. It has a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 150A, suitable for high-current switching applications. The gate-source voltage (VGS) of this MOSFET is ±20V, with a wide operating voltage range, which can meet various power management and control requirements. Its on-resistance (RDS(ON)) is very low, 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, which makes it have very low power loss when working at high current, significantly improving the efficiency of the overall system. SPB80N04S2L-03-VB is designed with Trench technology, which provides higher switching speed, lower conduction loss, and ensures high current handling capability. It is widely used in power management, electric vehicles, DC-DC converters and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
| Parameter | Description|
|-----------------|------------------------------------------|
| **Model** | SPB80N04S2L-03-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **VDS** | 40V |
| **VGS** | ±20V |
| **Vth** | 3V |
| **RDS(ON)** | 2.5mΩ@VGS=4.5V |
| **RDS(ON)** | 2mΩ@VGS=10V |
| **ID** | 150A |
| **Technology** | Trench |
| **Power dissipation** | 150W |
| **Maximum drain current** | 150A |
| **Maximum gate current** | ±30mA |
| **Switching time** | 20ns (typ.) |
| **Operating temperature range** | -55°C to 150°C |
| Parameter | Description|
|-----------------|------------------------------------------|
| **Model** | SPB80N04S2L-03-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **VDS** | 40V |
| **VGS** | ±20V |
| **Vth** | 3V |
| **RDS(ON)** | 2.5mΩ@VGS=4.5V |
| **RDS(ON)** | 2mΩ@VGS=10V |
| **ID** | 150A |
| **Technology** | Trench |
| **Power dissipation** | 150W |
| **Maximum drain current** | 150A |
| **Maximum gate current** | ±30mA |
| **Switching time** | 20ns (typ.) |
| **Operating temperature range** | -55°C to 150°C |
Domain and module applications：
3. Applications and modules
**SPB80N04S2L-03-VB**'s 40V withstand voltage, low on-resistance and high current carrying capacity make it very suitable for applications such as high-efficiency power conversion, power control and battery management. Here are some typical application areas and modules:
- **DC-DC converter**: This MOSFET is suitable for various DC-DC converters, especially in battery-powered devices, power modules and high-efficiency power management systems. The low RDS(ON) characteristics can significantly improve power efficiency, reduce power loss during the conversion process, and provide high current support at low voltage.
- **Power management system**: SPB80N04S2L-03-VB is very suitable for power management systems (such as industrial power supplies, communication power supplies, etc.). Its high current carrying capacity ensures that the power supply can operate stably and adapt to changes under different load conditions. By reducing power loss, this MOSFET can improve the overall efficiency of the system.
- **Battery Management System (BMS)**: In battery management systems for electric vehicles (EVs) and energy storage systems, the SPB80N04S2L-03-VB can provide efficient current control and reduce power losses through low RDS(ON) characteristics, optimize battery charging and discharging processes, and extend battery life.
- **Motor Drive**: In motor control systems, this MOSFET can stably control motor starting, speed regulation, and load switching. It is widely used in home appliances, industrial motor control, and power tools. Due to its high current carrying capacity, the SPB80N04S2L-03-VB can efficiently drive high-power loads.
- **Electric Vehicle Charging System**: In electric vehicle charging systems, the SPB80N04S2L-03-VB acts as a switching element, which helps improve charging efficiency and reduce losses, especially in fast charging and high-current charging scenarios. Its low on-resistance and fast switching characteristics can optimize the charging process of electric vehicles.
- **Inverter**: SPB80N04S2L-03-VB is widely used in inverter circuits, especially in solar inverters and UPS (uninterruptible power supply) systems. Its high current carrying capacity and low power loss make it an excellent performer in inverters and enable efficient energy conversion.
- **Power Amplifier**: In audio power amplifiers, this MOSFET can provide efficient current control to ensure high-quality output of audio signals. Its low RDS(ON) characteristics and high current handling capability make it an ideal choice for audio equipment and amplifier modules.
- **Load Control and Power Protection**: SPB80N04S2L-03-VB can be applied to high-power load control circuits and can provide protection for various high-load power supply modules. By providing reliable current switching control when the load current is too large or the voltage is unstable, it helps to extend the service life of the system and improve the reliability of the power supply.
- **Power Electronic Switch Control**: As a high-efficiency power electronic switch, SPB80N04S2L-03-VB is suitable for a variety of high-current applications, including switch control systems in welding machines, arc furnaces, and industrial equipment. Its high switching speed and low conduction loss make it very suitable for high-current and high-frequency switching applications.
In short, **SPB80N04S2L-03-VB**, as a low-voltage, high-current, high-efficiency N-channel MOSFET, is suitable for a variety of power management, power conversion, load control, and battery management applications. Its high current carrying capacity, low on-resistance, and fast switching characteristics make it perform well in electric vehicles, power management systems, DC-DC converters, inverters, and other fields, and is an ideal choice for high-efficiency power supply design and high-power load control.
**SPB80N04S2L-03-VB**'s 40V withstand voltage, low on-resistance and high current carrying capacity make it very suitable for applications such as high-efficiency power conversion, power control and battery management. Here are some typical application areas and modules:
- **DC-DC converter**: This MOSFET is suitable for various DC-DC converters, especially in battery-powered devices, power modules and high-efficiency power management systems. The low RDS(ON) characteristics can significantly improve power efficiency, reduce power loss during the conversion process, and provide high current support at low voltage.
- **Power management system**: SPB80N04S2L-03-VB is very suitable for power management systems (such as industrial power supplies, communication power supplies, etc.). Its high current carrying capacity ensures that the power supply can operate stably and adapt to changes under different load conditions. By reducing power loss, this MOSFET can improve the overall efficiency of the system.
- **Battery Management System (BMS)**: In battery management systems for electric vehicles (EVs) and energy storage systems, the SPB80N04S2L-03-VB can provide efficient current control and reduce power losses through low RDS(ON) characteristics, optimize battery charging and discharging processes, and extend battery life.
- **Motor Drive**: In motor control systems, this MOSFET can stably control motor starting, speed regulation, and load switching. It is widely used in home appliances, industrial motor control, and power tools. Due to its high current carrying capacity, the SPB80N04S2L-03-VB can efficiently drive high-power loads.
- **Electric Vehicle Charging System**: In electric vehicle charging systems, the SPB80N04S2L-03-VB acts as a switching element, which helps improve charging efficiency and reduce losses, especially in fast charging and high-current charging scenarios. Its low on-resistance and fast switching characteristics can optimize the charging process of electric vehicles.
- **Inverter**: SPB80N04S2L-03-VB is widely used in inverter circuits, especially in solar inverters and UPS (uninterruptible power supply) systems. Its high current carrying capacity and low power loss make it an excellent performer in inverters and enable efficient energy conversion.
- **Power Amplifier**: In audio power amplifiers, this MOSFET can provide efficient current control to ensure high-quality output of audio signals. Its low RDS(ON) characteristics and high current handling capability make it an ideal choice for audio equipment and amplifier modules.
- **Load Control and Power Protection**: SPB80N04S2L-03-VB can be applied to high-power load control circuits and can provide protection for various high-load power supply modules. By providing reliable current switching control when the load current is too large or the voltage is unstable, it helps to extend the service life of the system and improve the reliability of the power supply.
- **Power Electronic Switch Control**: As a high-efficiency power electronic switch, SPB80N04S2L-03-VB is suitable for a variety of high-current applications, including switch control systems in welding machines, arc furnaces, and industrial equipment. Its high switching speed and low conduction loss make it very suitable for high-current and high-frequency switching applications.
In short, **SPB80N04S2L-03-VB**, as a low-voltage, high-current, high-efficiency N-channel MOSFET, is suitable for a variety of power management, power conversion, load control, and battery management applications. Its high current carrying capacity, low on-resistance, and fast switching characteristics make it perform well in electric vehicles, power management systems, DC-DC converters, inverters, and other fields, and is an ideal choice for high-efficiency power supply design and high-power load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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