SiHF22N60S-VB Product details
Product introduction:
**SiHF22N60S-VB** is a high voltage, high power handling **N-channel MOSFET**, packaged in **TO220F**, suitable for applications with **650V drain-source voltage (VDS)**. The device's **20A drain current (ID)** indicates that it can handle high power applications and provide stable performance under high voltage conditions. Its **RDS(on) = 160mΩ** @VGS=10V, low on-resistance gives it excellent efficiency performance and reduces power loss.
This MOSFET uses **SJ_Multi-EPI technology**, which can improve thermal management performance and optimize current transfer efficiency. Its **Vth (threshold voltage)** is **3.5V**, which means it can effectively start at a lower gate voltage, suitable for a variety of power conversion and power management applications. SiHF22N60S-VB is particularly suitable for high-frequency switching, power conversion and power management systems with high energy efficiency requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V – Suitable for high voltage applications, capable of handling 650V voltage.
- **VGS (gate-source voltage): ** ±30V – Maximum gate-source voltage supported.
- **Vth (threshold voltage): ** 3.5V – Starts to conduct when the gate voltage reaches 3.5V.
- **RDS(on) (on-resistance): ** 160mΩ @VGS=10V – Low resistance in the on state, which can reduce energy loss.
- **ID (drain current): ** 20A – Maximum drain current is 20A, suitable for applications with high current requirements.
- **Technology:** SJ_Multi-EPI – Using multi-layer EPI technology, on-resistance, thermal stability and current transfer performance are optimized.
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Domain and module applications:
The high voltage and high current characteristics of the **SiHF22N60S-VB** MOSFET make it widely used in multiple power electronics fields that require high power and high voltage processing. The following are several typical application fields and modules:
1. **Switching power supply and power conversion:**
- SiHF22N60S-VB is suitable for various types of **switching power supplies (SMPS)**, including **AC-DC power converters**, **DC-DC converters** and **power adapters**. Its 650V withstand voltage and 20A drain current make it excel in high voltage and high current power supply designs, and can efficiently convert voltage and provide stable output.
- In high-frequency switching mode, the low on-resistance of this MOSFET (RDS(on) = 160mΩ) enables the power system to have higher conversion efficiency and reduce energy loss.
2. **Inverter Applications:**
- SiHF22N60S-VB is ideal for **solar inverters**, **wind power inverters**, **UPS systems** and other devices, where MOSFETs can provide efficient power conversion and stable system operation in these high-voltage applications.
- Especially in applications where direct current (DC) is converted to alternating current (AC), the high voltage withstand capability and good conductivity of this MOSFET can effectively improve the performance and reliability of the inverter.
3. **Motor Drive and Motor Control:**
- In **variable frequency drive (VFD)** and **motor control** systems, SiHF22N60S-VB MOSFET can provide efficient switching operations to control the starting, speed and torque regulation of the motor.
- It can be widely used in **power tools**, **electric vehicle drive**, **industrial automation motor control** and other fields, helping to improve system response speed and motor control accuracy.
4. **Battery Management System (BMS):**
- In **Battery Management System (BMS), SiHF22N60S-VB MOSFET can be used for battery overcurrent protection, power management, and battery charge and discharge control. It can handle current regulation in high-voltage battery packs to ensure the stability and safety of the battery system.
- Especially in **Li-ion battery management** or **EV battery management**, MOSFET can provide efficient current switching and power transmission to extend battery life.
5. **Automotive Electronics:**
- SiHF22N60S-VB is also suitable for use in power electronics systems for **EVs (EV)** and **HEVs (HEV), especially for **EV charging stations** and **EV battery management systems**. Its 650V withstand voltage and high current characteristics meet the needs of high-voltage power supplies and battery management in the automotive industry.
- In these applications, MOSFET can provide stable and reliable current control to ensure efficient operation of the system.
6. **Power protection and high efficiency energy efficiency improvement: **
- SiHF22N60S-VB can be used in **power protection systems** to optimize energy use through efficient switching and power control, ensuring that the power system for high-power applications has high safety and reliability.
- In high-power transformers, power amplifiers and other fields that require high-power switches, SiHF22N60S-VB can be used as a switching element to provide high efficiency and stable voltage and current management.
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