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SiA429DJT-T1-GE3-VB Product details

Product introduction:

Product Introduction - SiA429DJT-T1-GE3-VB

**SiA429DJT-T1-GE3-VB** is a high-performance P-type MOSFET packaged in DFN6 (2x2) using Trench technology for low-voltage, high-performance switching and power management applications. The device has a drain-source voltage (VDS) of -20V and a maximum drain current (ID) of -10A, making it ideal for medium-power load switching and power regulation applications. Its low on-resistance characteristics (RDS(ON) of 40mΩ@VGS=2.5V, 30mΩ@VGS=4.5V, 29mΩ@VGS=10V) ensure minimal power loss and further improve overall system efficiency. SiA429DJT-T1-GE3-VB is suitable for high-performance power management, battery-powered equipment, load switch control and other occasions, especially in space-constrained application environments, thanks to its compact package design, it provides an ideal choice.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.8V -10A 40mΩ 29mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.8V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.8V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P
Detailed parameter description

- **Package type**: DFN6(2x2)
- **Configuration**: Single P-type MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 40mΩ @ VGS = 2.5V
- 30mΩ @ VGS = 4.5V
- 29mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -10A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Power Management Systems**
SiA429DJT-T1-GE3-VB is suitable for power management modules, especially in applications that require low power loss and high efficiency. Its low on-resistance characteristics make it very suitable for use in power switches and power regulation circuits, which can reduce power losses during power conversion and improve the overall efficiency of the system. This MOSFET is particularly suitable for battery management systems for portable devices and charging devices.

2. **DC-DC Converters**
In DC-DC converter applications, SiA429DJT-T1-GE3-VB can be used as an efficient switching element in step-up and step-down converters, especially in step-down (buck) converters, where it performs well. The low on-resistance and efficient switching characteristics of this MOSFET can reduce power losses, making it suitable for power conversion systems for low-power devices such as battery-powered devices, power tools, and laptops.

3. **Load Switch Control**
In the load switch control circuit, SiA429DJT-T1-GE3-VB provides low on-resistance characteristics, effectively controlling current and reducing losses. It is suitable for applications that implement load switch control in low-voltage environments, such as smart power switches, LED lighting switch controls, and other power switching modules, and is particularly suitable for space-constrained product designs.

4. **Battery-Powered Systems**
Due to its low RDS(ON) and high-efficiency current control capabilities, SiA429DJT-T1-GE3-VB is an ideal choice for battery-powered systems. It can efficiently manage the battery charging and discharging process, reduce losses, and extend battery life. It is particularly suitable for wearable devices, power tools, and other application scenarios that have strict requirements for battery management.

5. **LED Drivers**
In LED drivers, SiA429DJT-T1-GE3-VB can be used as a switching element to stabilize the current supply and ensure long-term stable operation of the LED system. Low on-resistance reduces power loss in the driver and improves efficiency. It is widely used in lighting power supplies, dimmable LED controls, and other LED driver modules.

6. **Communication Devices**
In mobile communication devices and wireless communication systems, SiA429DJT-T1-GE3-VB can effectively perform power switching and current control, reduce power loss, and improve the battery life of the device. Especially in small wireless devices, network equipment and other occasions, this MOSFET can provide reliable performance.

7. **Automotive Electronics**
In automotive electronics applications, SiA429DJT-T1-GE3-VB can be used for vehicle power systems and load control, such as electric seat control, in-vehicle entertainment systems, and in-vehicle LED lighting. The MOSFET's performance in high-efficiency switching control makes it a preferred component for automotive environments, especially in applications that require high performance and compact packaging.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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