Featured Model

Your present location > Home page > Featured Model

SI7658DP-T1-GE3-VB Product details

Product introduction:

1. Product Introduction

**SI7658DP-T1-GE3-VB** is a high-performance, low on-resistance **N-Channel MOSFET** in **DFN8(5x6)** package, designed for high current, high power applications. This MOSFET has **drain-source voltage (V_DS)** 30V, suitable for switching and current control applications in medium voltage power systems. Its **gate-source voltage (V_GS)** supports an operating range of ±20V, suitable for various drive voltage requirements. **The threshold voltage (V_th)** is 1.7V, ensuring that it can be turned on at a lower gate voltage, with efficient control performance. **The on-resistance (R_DS(on)** is very low, 2.5mΩ (V_GS = 4.5V) and 1.8mΩ (V_GS = 10V), respectively, providing extremely low power loss and high-efficiency operation. **The maximum drain current (I_D)** is 160A, which enables this MOSFET to handle high current loads and is suitable for power conversion, electric vehicles, and high-frequency applications that require high load capabilities.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 1.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. Detailed parameter description

- **Model**: SI7658DP-T1-GE3-VB
- **Package**: DFN8(5x6)
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 2.5mΩ @ V_GS = 4.5V
- 1.8mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 160A
- **Technology**: Trench technology

Domain and module applications:

3. Application fields and module examples

**1. Power management system **
- **Application scenario**: In power converters, DC-DC converters and AC-DC power supplies, SI7658DP-T1-GE3-VB is suitable for high-efficiency power management due to its low on-resistance and high current capability. Its low loss characteristics enable it to significantly improve conversion efficiency and reduce heat loss.
- **Example**: In a high-efficiency buck converter, SI7658DP-T1-GE3-VB can be used for switching control of input current to provide a stable, low-loss output voltage, which is widely used in communication equipment, computer power supplies, LED driver power supplies and other fields.

**2. Electric Vehicle (EV) Battery Management and Motor Drive**
- **Application Scenarios**: In the battery management system (BMS) and motor drive system of electric vehicles, SI7658DP-T1-GE3-VB can achieve efficient switching control in battery charge and discharge control and motor drive circuits with its high current handling capability and low on-resistance. It can support currents up to 160A, which is suitable for high-power current switching in electric vehicles.
- **Example**: In the DC motor drive circuit of electric vehicles, SI7658DP-T1-GE3-VB can be used as a switching element to help achieve smooth current switching while reducing power loss and improving battery life.

**3. Wireless Communication Equipment**
- **Application Scenarios**: In the power management module of wireless communication equipment, SI7658DP-T1-GE3-VB can be used for efficient power conversion. Due to its extremely low on-resistance and fast switching capability, it can effectively reduce the power consumption of the system and improve the energy efficiency of communication equipment.
- **Example**: In the power module of 5G base stations or wireless transmitters, SI7658DP-T1-GE3-VB is used for efficient voltage conversion and power management to ensure that the equipment can still work efficiently and stably under high power requirements.

**4. Battery-powered system**
- **Application scenario**: In renewable energy (such as solar or wind energy) storage systems, SI7658DP-T1-GE3-VB can be used in battery charge and discharge control systems to provide low-loss current switches to ensure effective battery charging and current balance, and improve the efficiency and life of the battery system.
- **Example**: In a home solar energy storage system, SI7658DP-T1-GE3-VB is used as a key switching element in the DC-DC converter to help efficiently manage and convert battery power and reduce energy loss.

**5. Motor Control and Drive**
- **Application Scenarios**: This MOSFET can provide efficient current control in motor control systems, especially in high-efficiency DC motor (DCM) or brushless DC motor (BLDC) drive applications. Due to its low on-resistance and high switching speed, it can reduce heat loss in motor drives and improve response speed.
- **Example**: In industrial automation equipment, using SI7658DP-T1-GE3-VB as a switching element in the motor drive circuit helps the motor respond quickly to load changes while reducing energy loss and ensuring efficient and precise motor operation.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat