Product introduction：
**SI5404BDC-T1-E3-VB MOSFET Product Introduction**
**Model**: SI5404BDC-T1-E3-VB
**Package Type**: DFN8(3X2)-B
**Configuration**: Single-N-Channel
**Technology**: Trench
**Operating Voltage (VDS)**: 30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.5V
**On-Resistance (RDS(ON))**: 29mΩ @VGS=10V
**Maximum Drain Current (ID)**: 6.7A
**Application Areas**:
SI5404BDC-T1-E3-VB is a high-performance N-type MOSFET suitable for low-voltage power management, battery-driven devices, and synchronous rectification applications. Due to its low on-resistance and high drain current carrying capacity, this MOSFET is widely used in miniaturized electronic devices, portable devices, automotive electronics, power adapters, and smart hardware, especially in scenarios that require efficient power conversion and load switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Single-N |
30V |
|
1.5V |
6.7A |
|
|
29mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Single-N |
30V |
|
1.5V |
6.7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Single-N |
30V |
|
1.5V |
6.7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Single-N |
|
|
|
|
|
|
|
**SI5404BDC-T1-E3-VB MOSFET Detailed Parameter Description**
- **Package Type**: DFN8(3X2)-B
- This package is small and compact, suitable for space-constrained applications, and provides excellent heat dissipation performance, suitable for high power and high frequency applications.
- **Configuration**: Single N-type channel
- Single N-type MOSFET configuration, suitable for low-voltage load switching, power management and signal amplification applications.
- **VDS (drain-source voltage)**: 30V
- Suitable for working in low to medium voltage systems, can withstand voltages up to 30V, and is widely used in low-voltage power converters, load switching and smart devices.
- **VGS (gate-source voltage)**: ±20V
- Provides a wide gate drive voltage range, capable of efficiently switching MOSFETs, suitable for various power management circuits.
- **Vth (threshold voltage)**: 1.5V
- Lower threshold voltage means it can be turned on at low gate voltage, which helps improve switching efficiency in low-power applications.
- **RDS(ON)**:
- **29mΩ @VGS=10V**: Lower on-resistance, reduces power loss and improves efficiency, especially in applications with higher current, conduction loss will be significantly reduced.
- **ID (drain current)**: 6.7A
- Able to carry larger current, suitable for high-power applications such as power management, battery charging and discharging, etc., providing stable performance.
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Domain and module applications：
**SI5404BDC-T1-E3-VB MOSFET Application Fields and Modules**
1. **Power Management**:
- **DC-DC Converter**: SI5404BDC-T1-E3-VB is very suitable for switching elements in DC-DC converters, especially in applications with a voltage range of 5V to 30V. It can efficiently convert voltage and maintain stable output when the load changes, and is suitable for mobile devices, battery-driven systems, embedded power supply designs, etc.
- **Synchronous Rectification**: This MOSFET can provide excellent current transmission capability in synchronous rectification circuits. Low on-resistance minimizes energy loss and significantly improves conversion efficiency, which is especially suitable for efficient power supply systems.
2. **Portable Devices**:
- **Battery Management System**: SI5404BDC-T1-E3-VB can be used for load switching, power switching and battery protection circuits in battery management systems. It plays an important role in the battery charging and discharging process, can support large current output, and provide efficient and reliable power management.
- **Smartphones and portable devices**: In these devices, MOSFETs can be used for efficient power conversion and battery charging management. Low on-resistance can maximize battery efficiency and reduce heat generation, thereby extending battery life.
3. **Automotive electronics**:
- **Automotive power management**: This MOSFET is suitable for load switching and power conversion in automotive power management systems, helping to provide reliable voltage regulation and current distribution to ensure efficient operation of electric vehicle batteries and power systems.
- **Electric vehicle charging system**: In the charging module of electric vehicles, SI5404BDC-T1-E3-VB is used for efficient power switching, helping to control current transmission during battery charging and providing stable charging efficiency.
4. **Battery drive system**:
- **Mobile power**: In mobile power supplies (such as battery-powered power tools, LED lamps, etc.), SI5404BDC-T1-E3-VB acts as a current switch to help efficiently manage battery power usage and improve the overall efficiency of the system.
- **UPS (Uninterruptible Power Supply) System**: In UPS power supply, this MOSFET is used to convert the current between DC and AC and provide the necessary power switching. It can effectively manage the current flow in the UPS system to ensure that the system can work stably during power failure.
5. **Smart Hardware and Consumer Electronics**:
- **Smart Home Devices**: In smart homes, SI5404BDC-T1-E3-VB is widely used in power management, battery charging and discharging, load switching and other links to help improve the energy efficiency of equipment and extend battery life.
- **Consumer Electronics**: In consumer electronics such as smart wearable devices, wireless headphones, Bluetooth speakers, etc., MOSFET is used for power management, battery protection and power switching to provide efficient and reliable power control.
With its low on-resistance, high current carrying capacity and small package design, SI5404BDC-T1-E3-VB is suitable for a variety of low-voltage, high-efficiency power management applications, especially for smart hardware, battery-driven devices and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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