中文
English
SI3440DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
SI3440DV-T1-GE3 is a single N-channel MOSFET from Vishay, packaged in SOT23-6, with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 3.2A. This MOSFET uses advanced Trench technology and has a low on-resistance (RDS(ON) = 105mΩ@VGS=4.5V, 95mΩ@VGS=10V), enabling it to perform well in medium current and medium voltage applications. Its threshold voltage (Vth) is 1.8V, making it suitable for low voltage drive and high-efficiency switching applications. SI3440DV-T1-GE3 offers low power consumption and excellent thermal performance, and is widely used in various power management, load switching, battery protection and high-efficiency power conversion modules.
SI3440DV-T1-GE3 is a single N-channel MOSFET from Vishay, packaged in SOT23-6, with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 3.2A. This MOSFET uses advanced Trench technology and has a low on-resistance (RDS(ON) = 105mΩ@VGS=4.5V, 95mΩ@VGS=10V), enabling it to perform well in medium current and medium voltage applications. Its threshold voltage (Vth) is 1.8V, making it suitable for low voltage drive and high-efficiency switching applications. SI3440DV-T1-GE3 offers low power consumption and excellent thermal performance, and is widely used in various power management, load switching, battery protection and high-efficiency power conversion modules.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description:
- **Model**: SI3440DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- 105mΩ @ VGS = 4.5V
- 95mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 3.2A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Low voltage load switch, power management, DC-DC converter, battery protection circuit, etc.
- **Model**: SI3440DV-T1-GE3
- **Package**: SOT23-6
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- 105mΩ @ VGS = 4.5V
- 95mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 3.2A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to +150°C
- **Application**: Low voltage load switch, power management, DC-DC converter, battery protection circuit, etc.
Domain and module applications：
Application fields and module examples:
1. **Low voltage load switch**:
SI3440DV-T1-GE3 MOSFET performs well in low voltage load switch applications. Its low on-resistance and high maximum leakage current make it suitable for low voltage load control, especially in smart devices, sensors and portable battery-driven systems. In these systems, MOSFET is responsible for switching different loads, keeping the circuit running efficiently and extending battery life.
2. **Power management system**:
This MOSFET is suitable for use in power management modules, especially DC-DC converters that require efficient power conversion. Its low RDS(ON) reduces power loss, thereby improving the energy efficiency of the overall system. In applications such as mobile devices, embedded systems, power adapters, etc., SI3440DV-T1-GE3 can effectively improve the efficiency of power management and reduce overheating.
3. **DC-DC converter**:
SI3440DV-T1-GE3 is very suitable for use as a switching element in DC-DC converters. Due to its 100V withstand voltage capability and low on-resistance, it is able to provide stable performance in a variety of high-efficiency power conversion applications. This MOSFET is particularly suitable for converter applications in the medium voltage range, such as automotive electronics, battery chargers, industrial power systems, etc.
4. **Battery protection circuit**:
SI3440DV-T1-GE3 also has important applications in battery management and protection systems. It can be used to protect batteries from adverse conditions such as overvoltage, overcurrent and short circuit. The low on-resistance of the MOSFET ensures efficient current switching, ensuring minimal energy loss during battery charging and discharging, and is suitable for systems such as lithium battery protection and battery pack management.
5. **Automotive electronic system**:
SI3440DV-T1-GE3 is also widely used in automotive electronic systems. Its higher withstand voltage and lower on-resistance enable it to operate stably in automotive electrical systems. It can be used in low-voltage power modules such as on-board power management, battery-powered sensor control, and on-board communication modules to help improve system efficiency and reliability.
6. **Low-power devices**:
Due to its low on-resistance and efficient switching characteristics, SI3440DV-T1-GE3 is also suitable for various low-power devices, such as wireless communication modules, IoT devices, smart home products, etc. In these devices, MOSFET can achieve low current control while keeping the power consumption of the system to a minimum.
Summary: SI3440DV-T1-GE3 MOSFET is suitable for a variety of power management, load switching, battery protection and low-power applications with its 100V withstand voltage, low RDS(ON) and medium current capability (3.2A). It is widely used in portable devices, DC-DC converters, automotive electronics and battery protection circuits, and is especially suitable for medium-voltage applications requiring high efficiency and low power consumption.
1. **Low voltage load switch**:
SI3440DV-T1-GE3 MOSFET performs well in low voltage load switch applications. Its low on-resistance and high maximum leakage current make it suitable for low voltage load control, especially in smart devices, sensors and portable battery-driven systems. In these systems, MOSFET is responsible for switching different loads, keeping the circuit running efficiently and extending battery life.
2. **Power management system**:
This MOSFET is suitable for use in power management modules, especially DC-DC converters that require efficient power conversion. Its low RDS(ON) reduces power loss, thereby improving the energy efficiency of the overall system. In applications such as mobile devices, embedded systems, power adapters, etc., SI3440DV-T1-GE3 can effectively improve the efficiency of power management and reduce overheating.
3. **DC-DC converter**:
SI3440DV-T1-GE3 is very suitable for use as a switching element in DC-DC converters. Due to its 100V withstand voltage capability and low on-resistance, it is able to provide stable performance in a variety of high-efficiency power conversion applications. This MOSFET is particularly suitable for converter applications in the medium voltage range, such as automotive electronics, battery chargers, industrial power systems, etc.
4. **Battery protection circuit**:
SI3440DV-T1-GE3 also has important applications in battery management and protection systems. It can be used to protect batteries from adverse conditions such as overvoltage, overcurrent and short circuit. The low on-resistance of the MOSFET ensures efficient current switching, ensuring minimal energy loss during battery charging and discharging, and is suitable for systems such as lithium battery protection and battery pack management.
5. **Automotive electronic system**:
SI3440DV-T1-GE3 is also widely used in automotive electronic systems. Its higher withstand voltage and lower on-resistance enable it to operate stably in automotive electrical systems. It can be used in low-voltage power modules such as on-board power management, battery-powered sensor control, and on-board communication modules to help improve system efficiency and reliability.
6. **Low-power devices**:
Due to its low on-resistance and efficient switching characteristics, SI3440DV-T1-GE3 is also suitable for various low-power devices, such as wireless communication modules, IoT devices, smart home products, etc. In these devices, MOSFET can achieve low current control while keeping the power consumption of the system to a minimum.
Summary: SI3440DV-T1-GE3 MOSFET is suitable for a variety of power management, load switching, battery protection and low-power applications with its 100V withstand voltage, low RDS(ON) and medium current capability (3.2A). It is widely used in portable devices, DC-DC converters, automotive electronics and battery protection circuits, and is especially suitable for medium-voltage applications requiring high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
