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SI1499DH-T1-GE3-VB Product details

Product introduction:

SI1499DH-T1-GE3-VB MOSFET Product Introduction

SI1499DH-T1-GE3-VB is a high-efficiency single P-Channel MOSFET in SC70-6 package. It has a low on-resistance (Rds(on)) and is particularly suitable for low-voltage switching and high-efficiency power management applications. The maximum drain-source voltage (Vds) of this MOSFET is -20V, and the operating voltage range is Vgs = ±20V, which is suitable for low-voltage and low-current power switching scenarios. Its threshold voltage (Vth) is -0.6V, which enables efficient switching at low voltage. This MOSFET is manufactured with Trench technology and has low conduction loss and fast switching characteristics. It is widely used in various low-power electronic devices and battery management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Single-P -20V -0.6V -4A 45mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Single-P -20V -0.6V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Single-P -20V -0.6V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Single-P
SI1499DH-T1-GE3-VB MOSFET Detailed Parameter Description

| Parameter | Description|
|--------------------------------|-----------------------------------------|
| **Model** | SI1499DH-T1-GE3-VB |
| **Package** | SC70-6 |
| **Configuration** | Single P-Channel MOSFET |
| **Vds** | -20V |
| **Vgs** | ±20V |
| **Vth** | -0.6V |
| **Rds(on) @ Vgs = 2.5V** | 45mΩ |
| **Rds(on) @ Vgs = 4.5V** | 34mΩ |
| **Id** | -4A |
| **Technology** | Trench Technology|
| **Maximum Power Loss** | Approx. 0.16W (depending on operating conditions) |
| **Operating temperature range** | -40°C to +125°C |
| **Package size** | SC70-6 |
| **Drain-source current** | Max. -4A |

Domain and module applications:

SI1499DH-T1-GE3-VB Applications and Modules

1. **Portable low-power electronic devices**
SI1499DH-T1-GE3-VB has low on-resistance and fast response characteristics, making it very suitable for use in low-power devices. For example, it can be used in smart wearable devices, wireless headphones, sensor modules, etc. These devices usually require low power consumption and miniaturization design, and often rely on battery power.

2. **Battery management and power switch**
Due to its efficient current control capability and low power consumption characteristics, SI1499DH-T1-GE3-VB is suitable for battery management systems (BMS), such as battery protection circuits and power switching circuits. It can effectively control the battery charging and discharging process, prevent the battery from overcharging and over-discharging, and improve the battery life. It is particularly suitable for lithium battery management.

3. **Portable power management system**
In portable power management systems that require efficient switching, SI1499DH-T1-GE3-VB can be widely used as a P-Channel MOSFET in battery-powered systems. Its low on-resistance characteristics ensure high efficiency, especially suitable for devices such as miniaturized mobile power supplies (such as portable power banks).

4. **Wireless communication equipment**
In wireless communication modules and low-power wireless sensor networks (WSNs), SI1499DH-T1-GE3-VB can be used as a power switch or regulation element to ensure stable current supply and reduce power consumption. Due to its low Rds(on) and fast switching performance, it can efficiently switch current and voltage, meeting the balance between high efficiency and low energy consumption of wireless devices.

5. **Power tools and automotive electronics**
SI1499DH-T1-GE3-VB also has application potential in low-voltage power tools and automotive electronics applications. It can be used as a power management component in these devices to ensure that the system's current flow and switching operations are efficient and stable, especially in battery-powered applications, helping to optimize energy efficiency and extend device operating time.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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