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SI1441EDH-T1-GE3-VB Product details

Product introduction:

1. **Product Introduction:**

SI1441EDH-T1-GE3 is a high-performance single P-type MOSFET in SC70-6 package, designed for low-voltage, high-efficiency applications. With a maximum drain-source voltage (VDS) of -20V and a maximum gate-source voltage (VGS) of ±20V, this product is suitable for various power management and switching applications that require high efficiency and low power consumption. Its low on-resistance (RDS(ON)) performs well at different gate-source voltages: 45mΩ (VGS=2.5V) and 34mΩ (VGS=4.5V), which can effectively reduce power loss. The threshold voltage (Vth) of this MOSFET is -0.6V, which supports lower gate-source voltage startup, making it very suitable for small battery-powered devices and low-power circuits. The maximum drain current (ID) is -4A, which is suitable for multiple low-power, high-efficiency application scenarios, especially in the field of battery-powered and smart devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Single-P -20V -0.6V -4A 45mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Single-P -20V -0.6V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Single-P -20V -0.6V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Single-P
2. **Detailed parameter description: **

- **Model**: SI1441EDH-T1-GE3
- **Package type**: SC70-6
- **Configuration**: Single P-type MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 45mΩ @VGS=2.5V
- 34mΩ @VGS=4.5V
- **Maximum leakage current (ID)**: -4A
- **Technology type**: Trench technology
- **Power dissipation capability**: The specific value depends on the actual application environment and heat dissipation design, suitable for low-power circuits.

Domain and module applications:

3. **Application fields and module examples:**

# 1. **Portable electronic devices:**
SI1441EDH-T1-GE3 is ideal for portable electronic products such as smartphones, portable speakers, smart watches, etc., which usually require long battery life. The low on-resistance and efficient switching characteristics of this MOSFET can effectively reduce power consumption and extend battery life, making it an ideal choice in battery management systems
# 6. **Mobile devices and consumer electronics:**
This MOSFET can also play an important role in mobile devices and consumer electronics (such as tablets, Bluetooth headsets, etc.). Its low power consumption characteristics enable it to effectively support battery management of these devices, extend operating time, while reducing heat and energy loss.

# 7. **Power tools and portable battery chargers:**
For power tools and portable battery chargers, the application of SI1441EDH-T1-GE3 can improve charging efficiency and reduce losses in battery management systems. This enables power tools and battery chargers to complete charging in a shorter time and extend battery life.

Summary:
SI1441EDH-T1-GE3 is a high-efficiency, low-power P-type MOSFET in SC70-6 package, suitable for various low-voltage power management and switching applications. Its low on-resistance, fast switching and high efficiency make it an ideal choice for portable devices, battery-powered systems, LED drivers, smart homes and other fields. In these applications, it can significantly improve energy efficiency, reduce power loss, and extend the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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