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NP180N055TUJ-VB Product details
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NP180N055TUJ-VB Product Introduction
NP180N055TUJ-VB is a dual-channel N+N-type MOSFET in TO263-7L package based on Trench technology, suitable for high current, high efficiency power management and motor control applications. The dual N-channel configuration of this device makes it suitable for synchronous rectification circuits and bridge circuit designs, reducing switching losses and improving system efficiency. Its extremely low on-resistance (2mΩ @ VGS = 10V) can reduce energy loss when large currents are conducted, and supports a maximum drain current of 150A, making it perform well in applications requiring high power output.
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NP180N055TUJ-VB is a dual-channel N+N-type MOSFET in TO263-7L package based on Trench technology, suitable for high current, high efficiency power management and motor control applications. The dual N-channel configuration of this device makes it suitable for synchronous rectification circuits and bridge circuit designs, reducing switching losses and improving system efficiency. Its extremely low on-resistance (2mΩ @ VGS = 10V) can reduce energy loss when large currents are conducted, and supports a maximum drain current of 150A, making it perform well in applications requiring high power output.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Model**: NP180N055TUJ-VB
- **Package type**: TO263-7L
- **Configuration**: Dual N+N channel
- **VDS (drain to source voltage)**: 60V
- **VGS (gate to source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 2mΩ @ VGS = 10V
- **ID (drain current)**: 150A
- **Technology**: Trench technology
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- **Model**: NP180N055TUJ-VB
- **Package type**: TO263-7L
- **Configuration**: Dual N+N channel
- **VDS (drain to source voltage)**: 60V
- **VGS (gate to source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 2mΩ @ VGS = 10V
- **ID (drain current)**: 150A
- **Technology**: Trench technology
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Domain and module applications：
Applications and modules
1. **Synchronous Rectification Circuit**:
This dual N+N MOSFET is ideal for synchronous rectifier design, replacing traditional diodes, reducing reverse losses, and improving the energy efficiency of DC-DC converters and AC-DC power supplies.
2. **Motor Control and Drive**:
In electric vehicles, power tools, and industrial automation, it is used to control DC motors or brushless motors. Its high current capability and low on-resistance make it suitable for starting and continuous operation of heavy loads.
3. **Battery Management System (BMS)**:
In the BMS of electric vehicles and energy storage systems, it is used to control the charging and discharging paths, improve efficiency, and ensure stability under high power conditions.
4. **Server and Data Center Power**:
Suitable for high-power power modules and point-of-load converters to reduce energy consumption and improve the energy efficiency of server and data center equipment.
5. **Solar Inverter**:
This MOSFET can be used in efficient DC-AC inverter circuits to help improve energy conversion efficiency and reduce heat loss.
The dual-channel design and excellent current carrying capacity of NP180N055TUJ-VB make it widely suitable for modern electronic systems with high power and high efficiency requirements, playing an important role in electric vehicles, smart grids and high-performance power modules.
1. **Synchronous Rectification Circuit**:
This dual N+N MOSFET is ideal for synchronous rectifier design, replacing traditional diodes, reducing reverse losses, and improving the energy efficiency of DC-DC converters and AC-DC power supplies.
2. **Motor Control and Drive**:
In electric vehicles, power tools, and industrial automation, it is used to control DC motors or brushless motors. Its high current capability and low on-resistance make it suitable for starting and continuous operation of heavy loads.
3. **Battery Management System (BMS)**:
In the BMS of electric vehicles and energy storage systems, it is used to control the charging and discharging paths, improve efficiency, and ensure stability under high power conditions.
4. **Server and Data Center Power**:
Suitable for high-power power modules and point-of-load converters to reduce energy consumption and improve the energy efficiency of server and data center equipment.
5. **Solar Inverter**:
This MOSFET can be used in efficient DC-AC inverter circuits to help improve energy conversion efficiency and reduce heat loss.
The dual-channel design and excellent current carrying capacity of NP180N055TUJ-VB make it widely suitable for modern electronic systems with high power and high efficiency requirements, playing an important role in electric vehicles, smart grids and high-performance power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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