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NCE65T2K4I-VB Product details
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1. NCE65T2K4I-VB Product Introduction
NCE65T2K4I-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for small and medium current, high voltage applications. Its maximum drain-source voltage (VDS) is 650V and the drain current (ID) is 2A, which is suitable for applications requiring high voltage isolation. The device adopts **SJ (Super Junction) Multi-EPI technology** to optimize the switching performance under high voltage while reducing power consumption. This model has an **on-resistance (RDS(ON)) of 2300mΩ** and has reliable load capacity when providing current, especially suitable for control modules in industrial control systems, household appliances and power conversion applications.
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NCE65T2K4I-VB is a high-voltage single N-channel MOSFET in TO251 package, designed for small and medium current, high voltage applications. Its maximum drain-source voltage (VDS) is 650V and the drain current (ID) is 2A, which is suitable for applications requiring high voltage isolation. The device adopts **SJ (Super Junction) Multi-EPI technology** to optimize the switching performance under high voltage while reducing power consumption. This model has an **on-resistance (RDS(ON)) of 2300mΩ** and has reliable load capacity when providing current, especially suitable for control modules in industrial control systems, household appliances and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description
- **Model**: NCE65T2K4I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2300mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 2A
- **Peak pulse current (ID,pulse)**: Supports higher transient current
- **Power consumption (Ptot)**: Suitable for low and medium power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Super Junction Multi-EPI
- **Package features**: TO251 package has compactness and excellent heat dissipation performance, suitable for PCB integration applications.
- **Main features**:
- **High voltage tolerance**, can be used for high voltage isolation applications
- **SJ technology** improves conduction loss and withstand voltage performance
- **Fast switching capability**, suitable for high frequency circuit applications
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- **Model**: NCE65T2K4I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2300mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 2A
- **Peak pulse current (ID,pulse)**: Supports higher transient current
- **Power consumption (Ptot)**: Suitable for low and medium power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Super Junction Multi-EPI
- **Package features**: TO251 package has compactness and excellent heat dissipation performance, suitable for PCB integration applications.
- **Main features**:
- **High voltage tolerance**, can be used for high voltage isolation applications
- **SJ technology** improves conduction loss and withstand voltage performance
- **Fast switching capability**, suitable for high frequency circuit applications
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Domain and module applications：
III. Application fields and module examples
1. **Industrial control systems**
NCE65T2K4I-VB is suitable for high-voltage drive modules in industrial automation control systems, such as PLC controllers or motor starting circuits. Its 650V withstand voltage and compact package make it very suitable for scenarios with limited volume and reliability requirements.
2. **Smart home appliances and power conversion equipment**
The device is used to drive and control circuits in home appliances (such as smart air conditioners, microwave ovens) and power conversion modules to ensure stable operation of the equipment and reduce energy loss when shutting down.
3. **Electricity meters and energy monitoring systems**
In the electricity meters and energy monitoring systems in the smart grid, the MOSFET is used to isolate and control the high-voltage part to ensure the accuracy of energy measurement and the safety of the circuit.
4. **Small Switching Power Supply (SMPS)**
NCE65T2K4I-VB is suitable for low-power switching power supplies. As a switching device on the high-voltage side, it helps to improve conversion efficiency and reduce standby power consumption.
5. **LED drive circuit and power management module**
This MOSFET can be used to drive high-voltage LED lighting systems, ensure stable current supply and improve lighting efficiency, and meet the needs of commercial and industrial lighting fields.
With its high-voltage tolerance and moderate current output, NCE65T2K4I-VB is very suitable for high-voltage isolation and control module applications in industrial control, home appliances, and smart meters. Its compact package and reliable performance ensure its efficient operation in a variety of application environments.
1. **Industrial control systems**
NCE65T2K4I-VB is suitable for high-voltage drive modules in industrial automation control systems, such as PLC controllers or motor starting circuits. Its 650V withstand voltage and compact package make it very suitable for scenarios with limited volume and reliability requirements.
2. **Smart home appliances and power conversion equipment**
The device is used to drive and control circuits in home appliances (such as smart air conditioners, microwave ovens) and power conversion modules to ensure stable operation of the equipment and reduce energy loss when shutting down.
3. **Electricity meters and energy monitoring systems**
In the electricity meters and energy monitoring systems in the smart grid, the MOSFET is used to isolate and control the high-voltage part to ensure the accuracy of energy measurement and the safety of the circuit.
4. **Small Switching Power Supply (SMPS)**
NCE65T2K4I-VB is suitable for low-power switching power supplies. As a switching device on the high-voltage side, it helps to improve conversion efficiency and reduce standby power consumption.
5. **LED drive circuit and power management module**
This MOSFET can be used to drive high-voltage LED lighting systems, ensure stable current supply and improve lighting efficiency, and meet the needs of commercial and industrial lighting fields.
With its high-voltage tolerance and moderate current output, NCE65T2K4I-VB is very suitable for high-voltage isolation and control module applications in industrial control, home appliances, and smart meters. Its compact package and reliable performance ensure its efficient operation in a variety of application environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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