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NCE65R1K2I-VB Product details
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NCE65R1K2I-VB Product Introduction
NCE65R1K2I-VB is a **650V N-Channel MOSFET**, using **TO251 package**, suitable for high voltage and medium current applications. The device has excellent electrical characteristics and thermal performance, can withstand drain-source voltage (VDS) up to **650V**, and supports **±30V** gate-source voltage (VGS). Its threshold voltage (Vth) is **3.5V**, and when **VGS=10V**, its on-resistance (RDS(ON)) is only **950mΩ**, and the maximum drain current (ID) reaches **5A**. NCE65R1K2I-VB adopts **SJ_Multi-EPI technology**, has good switching performance and reliability, and is suitable for power management, switching power supplies and other applications requiring high efficiency.
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NCE65R1K2I-VB is a **650V N-Channel MOSFET**, using **TO251 package**, suitable for high voltage and medium current applications. The device has excellent electrical characteristics and thermal performance, can withstand drain-source voltage (VDS) up to **650V**, and supports **±30V** gate-source voltage (VGS). Its threshold voltage (Vth) is **3.5V**, and when **VGS=10V**, its on-resistance (RDS(ON)) is only **950mΩ**, and the maximum drain current (ID) reaches **5A**. NCE65R1K2I-VB adopts **SJ_Multi-EPI technology**, has good switching performance and reliability, and is suitable for power management, switching power supplies and other applications requiring high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: NCE65R1K2I-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C ~ 150°C
- **Package features**: The TO251 package provides excellent thermal management characteristics and is suitable for high power density applications.
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- **Model**: NCE65R1K2I-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C ~ 150°C
- **Package features**: The TO251 package provides excellent thermal management characteristics and is suitable for high power density applications.
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Domain and module applications：
Application fields and module examples
The high voltage and low conduction loss characteristics of NCE65R1K2I-VB make it widely applicable to multiple fields and modules, including:
1. **Switching Power Supply (SMPS)**: In switching power supply design, this MOSFET can be used as the main switching device to efficiently convert voltage, reduce energy loss, and improve the energy efficiency of the system.
2. **Motor Drive**: In motor control and drive circuits, NCE65R1K2I-VB can be used to control DC motors or stepper motors, support high-voltage drive, and improve the starting performance and operating efficiency of the motor.
3. **LED Drive**: This MOSFET is suitable for efficient LED drive circuits. Through its low RDS(ON) characteristics, it can effectively manage current and improve the energy efficiency of LED lighting systems.
4. **Power Electronics Devices**: In power electronics applications such as inverters and rectifiers, the NCE65R1K2I-VB can be used as a high-voltage switch to support efficient energy conversion and transmission.
5. **Power Management Module**: In power management modules of various electronic devices, this MOSFET can also be used for load switching and power monitoring to ensure stable operation and overload protection of the equipment.
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NCE65R1K2I-VB is an ideal choice for high voltage applications with its **high withstand voltage** and **excellent conduction characteristics**. Its **TO251 package** provides good heat dissipation performance and is suitable for a variety of high-performance and high-power density electronic devices and modules.
The high voltage and low conduction loss characteristics of NCE65R1K2I-VB make it widely applicable to multiple fields and modules, including:
1. **Switching Power Supply (SMPS)**: In switching power supply design, this MOSFET can be used as the main switching device to efficiently convert voltage, reduce energy loss, and improve the energy efficiency of the system.
2. **Motor Drive**: In motor control and drive circuits, NCE65R1K2I-VB can be used to control DC motors or stepper motors, support high-voltage drive, and improve the starting performance and operating efficiency of the motor.
3. **LED Drive**: This MOSFET is suitable for efficient LED drive circuits. Through its low RDS(ON) characteristics, it can effectively manage current and improve the energy efficiency of LED lighting systems.
4. **Power Electronics Devices**: In power electronics applications such as inverters and rectifiers, the NCE65R1K2I-VB can be used as a high-voltage switch to support efficient energy conversion and transmission.
5. **Power Management Module**: In power management modules of various electronic devices, this MOSFET can also be used for load switching and power monitoring to ensure stable operation and overload protection of the equipment.
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NCE65R1K2I-VB is an ideal choice for high voltage applications with its **high withstand voltage** and **excellent conduction characteristics**. Its **TO251 package** provides good heat dissipation performance and is suitable for a variety of high-performance and high-power density electronic devices and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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