中文
English
NCE30H32WD-VB Product details
Back to previous pageProduct introduction：
NCE30H32WD-VB Product Introduction
NCE30H32WD-VB is a high-performance unipolar N-type MOSFET in a **TO263** package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is **30V** and its maximum drain current (ID) can reach **260A**, making it ideal for applications that require high efficiency and high current carrying capacity. The device has a maximum gate-source voltage (VGS) of **±20V** and a threshold voltage (Vth) of **1.7V**. At VGS = 4.5V, the on-resistance (RDS(ON)) is **1.6mΩ**, and is even lower at **1.4mΩ** at VGS = 10V. With its excellent low on-resistance and Trench technology, the NCE30H32WD-VB is an ideal choice for modern power management and switching applications, significantly improving the efficiency and thermal performance of power supplies.
---
NCE30H32WD-VB is a high-performance unipolar N-type MOSFET in a **TO263** package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is **30V** and its maximum drain current (ID) can reach **260A**, making it ideal for applications that require high efficiency and high current carrying capacity. The device has a maximum gate-source voltage (VGS) of **±20V** and a threshold voltage (Vth) of **1.7V**. At VGS = 4.5V, the on-resistance (RDS(ON)) is **1.6mΩ**, and is even lower at **1.4mΩ** at VGS = 10V. With its excellent low on-resistance and Trench technology, the NCE30H32WD-VB is an ideal choice for modern power management and switching applications, significantly improving the efficiency and thermal performance of power supplies.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|--------------------------|-------------------------|
| **Model** | NCE30H32WD-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-type|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 1.6mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 260A |
| **Technology** | Trench |
---
| **Parameter** | **Value** |
|--------------------------|-------------------------|
| **Model** | NCE30H32WD-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-type|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 1.6mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 260A |
| **Technology** | Trench |
---
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power management**
NCE30H32WD-VB is widely used in high-frequency switching power supplies and DC-DC converters. Its low on-resistance helps reduce power loss and improve conversion efficiency, making it suitable for power management applications.
2. **Electric vehicle drive**
This MOSFET is suitable for the motor drive circuit of electric vehicles. It can carry currents up to 260A, ensuring that electric vehicles can still run smoothly under high loads while improving energy efficiency.
3. **Industrial automation equipment**
In industrial automation equipment, NCE30H32WD-VB can be used as a power switch and driver element, providing reliable current control and efficient power management, supporting the stable operation of various automation systems.
4. **High-power LED drive**
This device is suitable for the drive circuit of high-power LED lighting systems. Its low resistance ensures the high efficiency and stability of lamps and improves the overall performance of lighting products.
5. **Data Center Power System**
In data centers, the NCE30H32WD-VB can be used in power distribution and management modules to ensure stable power supply to high-power servers and storage devices, and optimize energy efficiency and thermal performance.
Through these applications, the NCE30H32WD-VB demonstrates its versatility in modern high-current, low-voltage systems and is an ideal choice for improving power performance and reliability.
1. **High-efficiency power management**
NCE30H32WD-VB is widely used in high-frequency switching power supplies and DC-DC converters. Its low on-resistance helps reduce power loss and improve conversion efficiency, making it suitable for power management applications.
2. **Electric vehicle drive**
This MOSFET is suitable for the motor drive circuit of electric vehicles. It can carry currents up to 260A, ensuring that electric vehicles can still run smoothly under high loads while improving energy efficiency.
3. **Industrial automation equipment**
In industrial automation equipment, NCE30H32WD-VB can be used as a power switch and driver element, providing reliable current control and efficient power management, supporting the stable operation of various automation systems.
4. **High-power LED drive**
This device is suitable for the drive circuit of high-power LED lighting systems. Its low resistance ensures the high efficiency and stability of lamps and improves the overall performance of lighting products.
5. **Data Center Power System**
In data centers, the NCE30H32WD-VB can be used in power distribution and management modules to ensure stable power supply to high-power servers and storage devices, and optimize energy efficiency and thermal performance.
Through these applications, the NCE30H32WD-VB demonstrates its versatility in modern high-current, low-voltage systems and is an ideal choice for improving power performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
