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NCE15H10TA-VB Product details

Product introduction:

1. NCE15H10TA-VB Product Introduction
NCE15H10TA-VB is a high-performance **single N-channel MOSFET** in **TO-247 package**, suitable for high-power and high-voltage applications. Its **drain-source voltage (VDS)** can reach **150V**, while its **gate-source voltage (VGS)** is **±20V**. The turn-on threshold voltage is **3V**, and the on-resistance is only **12mΩ** at **VGS = 10V**, and the maximum drain current (ID) can reach **150A**. Using **Trench technology**, NCE15H10TA-VB provides low conduction loss and high efficiency, suitable for high current and high frequency switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 150V 3V 150A 12mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 150V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 150V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
II. NCE15H10TA-VB Detailed parameter description

| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package type** | TO-247 | Suitable for high power applications with good heat dissipation|
| **Configuration** | Single N-channel MOSFET | Suitable for high power and switching applications|
| **Drain-source voltage (VDS)** | 150V | Maximum drain-source voltage difference|
| **Gate-source voltage (VGS)** | ±20V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 3V | Minimum gate voltage required to start conduction|
| **On-resistance (RDS(ON))** | 12mΩ (@VGS = 10V) | Lower on-resistance helps reduce energy consumption|
| **Maximum drain current (ID)** | 150A | Suitable for high current applications|
| **Technology** | Trench | Improve conduction performance and reduce switching losses|

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Domain and module applications:

III. Application Fields and Modules

1. **Power Conversion and Management Modules:**
NCE15H10TA-VB is commonly used in **high-efficiency DC-DC converters**, suitable for input and output switches of power supply systems, which can effectively reduce conduction losses and improve overall energy efficiency.

2. **Industrial Automation and Control:**
In industrial equipment, this MOSFET can be used as a **switching element for driving motors** to achieve precise control of heavy-load equipment, and is widely used in factory automation and mechanical control systems.

3. **Automotive Electronics:**
NCE15H10TA-VB can be used in **power management systems for electric vehicles**, supporting high-power motor drives and control of on-board equipment, ensuring safety and high efficiency under high load conditions.

4. **Inverters and Renewable Energy Systems:**
This MOSFET plays an important role in **solar inverters and energy storage systems**, helping to improve energy conversion efficiency and system stability.

5. **Telecommunications Equipment:**
NCE15H10TA-VB is suitable for **base stations and wireless communication equipment** as a switching element to achieve efficient power amplification and meet the requirements of high-frequency signals.

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NCE15H10TA-VB is a high-performance N-channel MOSFET. With its superior electrical characteristics and reliable performance, it is widely used in power management, industrial control, automotive electronics and renewable energy fields to meet the needs of modern electronic equipment for high efficiency and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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