NCE15H10TA-VB Product details
Product introduction:
NCE15H10TA-VB is a high-performance **single N-channel MOSFET** in **TO-247 package**, suitable for high-power and high-voltage applications. Its **drain-source voltage (VDS)** can reach **150V**, while its **gate-source voltage (VGS)** is **±20V**. The turn-on threshold voltage is **3V**, and the on-resistance is only **12mΩ** at **VGS = 10V**, and the maximum drain current (ID) can reach **150A**. Using **Trench technology**, NCE15H10TA-VB provides low conduction loss and high efficiency, suitable for high current and high frequency switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|----------------------------------|
| **Package type** | TO-247 | Suitable for high power applications with good heat dissipation|
| **Configuration** | Single N-channel MOSFET | Suitable for high power and switching applications|
| **Drain-source voltage (VDS)** | 150V | Maximum drain-source voltage difference|
| **Gate-source voltage (VGS)** | ±20V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 3V | Minimum gate voltage required to start conduction|
| **On-resistance (RDS(ON))** | 12mΩ (@VGS = 10V) | Lower on-resistance helps reduce energy consumption|
| **Maximum drain current (ID)** | 150A | Suitable for high current applications|
| **Technology** | Trench | Improve conduction performance and reduce switching losses|
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Domain and module applications:
1. **Power Conversion and Management Modules:**
NCE15H10TA-VB is commonly used in **high-efficiency DC-DC converters**, suitable for input and output switches of power supply systems, which can effectively reduce conduction losses and improve overall energy efficiency.
2. **Industrial Automation and Control:**
In industrial equipment, this MOSFET can be used as a **switching element for driving motors** to achieve precise control of heavy-load equipment, and is widely used in factory automation and mechanical control systems.
3. **Automotive Electronics:**
NCE15H10TA-VB can be used in **power management systems for electric vehicles**, supporting high-power motor drives and control of on-board equipment, ensuring safety and high efficiency under high load conditions.
4. **Inverters and Renewable Energy Systems:**
This MOSFET plays an important role in **solar inverters and energy storage systems**, helping to improve energy conversion efficiency and system stability.
5. **Telecommunications Equipment:**
NCE15H10TA-VB is suitable for **base stations and wireless communication equipment** as a switching element to achieve efficient power amplification and meet the requirements of high-frequency signals.
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NCE15H10TA-VB is a high-performance N-channel MOSFET. With its superior electrical characteristics and reliable performance, it is widely used in power management, industrial control, automotive electronics and renewable energy fields to meet the needs of modern electronic equipment for high efficiency and high power.
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