中文
English
MI3130-VB Product details
Back to previous pageProduct introduction：
1. MI3130-VB Product Introduction
MI3130-VB is a **single N-channel MOSFET**, which adopts the compact **SOT89 package**, which is particularly suitable for circuit design with limited space. Its drain-source voltage (V_DS) is **30V**, and the maximum gate-source voltage (V_GS) is **±20V**, which can provide flexible operation in a variety of control circuits. The turn-on voltage (V_th) of the device is **1.7V**, and it can work stably at a lower driving voltage. The on-resistance (R_DS(ON)) is **30mΩ** and **22mΩ** at **2.5V** and **4.5V** gate voltages, respectively, ensuring low power consumption and good switching performance. The maximum drain current of MI3130-VB is **6.8A**, and it uses **trench technology** to further improve the switching speed and efficiency, making it suitable for power-sensitive electronic systems.
---
MI3130-VB is a **single N-channel MOSFET**, which adopts the compact **SOT89 package**, which is particularly suitable for circuit design with limited space. Its drain-source voltage (V_DS) is **30V**, and the maximum gate-source voltage (V_GS) is **±20V**, which can provide flexible operation in a variety of control circuits. The turn-on voltage (V_th) of the device is **1.7V**, and it can work stably at a lower driving voltage. The on-resistance (R_DS(ON)) is **30mΩ** and **22mΩ** at **2.5V** and **4.5V** gate voltages, respectively, ensuring low power consumption and good switching performance. The maximum drain current of MI3130-VB is **6.8A**, and it uses **trench technology** to further improve the switching speed and efficiency, making it suitable for power-sensitive electronic systems.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
2. MI3130-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package type** | SOT89 | Miniaturized package, suitable for compact circuit design|
| **MOSFET type** | Single N-Channel | Suitable for forward current control|
| **Drain-source voltage (V_DS)** | 30V | Maximum withstand drain-source voltage|
| **Gate-source voltage (V_GS)** | ±20V | Allowable gate-source voltage range, providing flexible control|
| **Turning voltage (V_th)** | 1.7V | Gate voltage at which the device starts to conduct|
| **On-resistance (R_DS(ON))** | 30mΩ @ V_GS=2.5V | On-resistance when driven at low voltage|
| **On-resistance (R_DS(ON))** | 22mΩ @ V_GS=4.5V | On-resistance at higher gate voltage|
| **Maximum drain current (I_D)** | 6.8A | Maximum current the device can carry|
| **Technology** | Trench | Trench technology, increasing switching speed and reducing losses|
---
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|------------------------------------------|
| **Package type** | SOT89 | Miniaturized package, suitable for compact circuit design|
| **MOSFET type** | Single N-Channel | Suitable for forward current control|
| **Drain-source voltage (V_DS)** | 30V | Maximum withstand drain-source voltage|
| **Gate-source voltage (V_GS)** | ±20V | Allowable gate-source voltage range, providing flexible control|
| **Turning voltage (V_th)** | 1.7V | Gate voltage at which the device starts to conduct|
| **On-resistance (R_DS(ON))** | 30mΩ @ V_GS=2.5V | On-resistance when driven at low voltage|
| **On-resistance (R_DS(ON))** | 22mΩ @ V_GS=4.5V | On-resistance at higher gate voltage|
| **Maximum drain current (I_D)** | 6.8A | Maximum current the device can carry|
| **Technology** | Trench | Trench technology, increasing switching speed and reducing losses|
---
Domain and module applications：
III. Application fields and module examples of MI3130-VB
1. **Load switch and current control**
MI3130-VB is often used for load switches in electronic devices to control the on and off of small motors, relays or LED lights. In power management modules, it can effectively control the current channel and ensure the reliability of the system.
2. **DC-DC Converter**
In DC-DC power conversion modules, this MOSFET is used to efficiently convert and regulate voltage, especially for power management in portable devices and wireless devices.
3. **Consumer electronics**
MI3130-VB is suitable for small consumer electronics such as smartphones, tablets and wearable devices, providing high-speed switching to optimize power distribution and power consumption.
4. **Communication and network equipment**
This MOSFET can be used as a switching element in communication modules to ensure efficient switching and stable transmission of data lines, suitable for network equipment such as Wi-Fi routers and modems.
5. **Industrial Automation Control**
In the field of industrial automation, MI3130-VB is used to control sensors, actuators and other devices. Its low on-resistance and high current carrying capacity ensure the efficiency and stability of system operation.
6. **Battery Management System (BMS)**
MI3130-VB can also be used in battery management systems to control battery charge and discharge, ensure the health of the battery and the overall safety of the system.
With its compact package, low on-resistance and high efficiency, MI3130-VB is an ideal choice for low-power applications in many fields, and is widely used in consumer electronics, industrial control and power management modules.
1. **Load switch and current control**
MI3130-VB is often used for load switches in electronic devices to control the on and off of small motors, relays or LED lights. In power management modules, it can effectively control the current channel and ensure the reliability of the system.
2. **DC-DC Converter**
In DC-DC power conversion modules, this MOSFET is used to efficiently convert and regulate voltage, especially for power management in portable devices and wireless devices.
3. **Consumer electronics**
MI3130-VB is suitable for small consumer electronics such as smartphones, tablets and wearable devices, providing high-speed switching to optimize power distribution and power consumption.
4. **Communication and network equipment**
This MOSFET can be used as a switching element in communication modules to ensure efficient switching and stable transmission of data lines, suitable for network equipment such as Wi-Fi routers and modems.
5. **Industrial Automation Control**
In the field of industrial automation, MI3130-VB is used to control sensors, actuators and other devices. Its low on-resistance and high current carrying capacity ensure the efficiency and stability of system operation.
6. **Battery Management System (BMS)**
MI3130-VB can also be used in battery management systems to control battery charge and discharge, ensure the health of the battery and the overall safety of the system.
With its compact package, low on-resistance and high efficiency, MI3130-VB is an ideal choice for low-power applications in many fields, and is widely used in consumer electronics, industrial control and power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
