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J664-VB Product details
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J664-VB MOSFET Product Introduction
J664-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high voltage and high efficiency applications. With a maximum drain-source voltage (VDS) of -100V, the device is suitable for a variety of power management and control applications requiring high voltage resistance. With its advanced Trench technology, J664-VB achieves low on-resistance (RDS(ON)) and provides excellent conductivity at different gate voltages. With a threshold voltage of -2V, this MOSFET can achieve fast switching operation at a lower gate drive voltage, which is very suitable for high power devices and motor control applications.
J664-VB is a high-performance single P-channel MOSFET in TO263 package, designed for high voltage and high efficiency applications. With a maximum drain-source voltage (VDS) of -100V, the device is suitable for a variety of power management and control applications requiring high voltage resistance. With its advanced Trench technology, J664-VB achieves low on-resistance (RDS(ON)) and provides excellent conductivity at different gate voltages. With a threshold voltage of -2V, this MOSFET can achieve fast switching operation at a lower gate drive voltage, which is very suitable for high power devices and motor control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
J664-VB detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: -37A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: -37A
- **Technology**: Trench
Domain and module applications：
J664-VB Application Fields and Module Examples
1. **Power Management System**: J664-VB is very suitable for use in DC-DC converters and power management applications. Its high withstand voltage characteristics enable it to work effectively in high voltage environments and provide stable power output. It is widely used in servers, industrial power supplies and battery-powered devices.
2. **Motor Control**: In motor drive and control systems, J664-VB can be used as a high-side switch to control the start and stop of the motor. Its low on-resistance ensures efficient current transmission and is suitable for motor control in power tools, household appliances and industrial automation equipment.
3. **Automotive Electronics**: This MOSFET is suitable for use in automotive electronic systems such as power windows, headlight control and battery management systems. Its high withstand voltage capability and excellent switching performance enable it to operate reliably in automotive environments and withstand extreme conditions.
4. **Photovoltaic Systems**: J664-VB is also widely used in solar inverters. Its excellent conductivity and voltage resistance can effectively manage the high voltage output by solar panels and improve the overall energy conversion efficiency.
Through these application examples, J664-VB demonstrates its important role in the field of high voltage and high efficiency, providing a reliable solution for modern electronic devices.
1. **Power Management System**: J664-VB is very suitable for use in DC-DC converters and power management applications. Its high withstand voltage characteristics enable it to work effectively in high voltage environments and provide stable power output. It is widely used in servers, industrial power supplies and battery-powered devices.
2. **Motor Control**: In motor drive and control systems, J664-VB can be used as a high-side switch to control the start and stop of the motor. Its low on-resistance ensures efficient current transmission and is suitable for motor control in power tools, household appliances and industrial automation equipment.
3. **Automotive Electronics**: This MOSFET is suitable for use in automotive electronic systems such as power windows, headlight control and battery management systems. Its high withstand voltage capability and excellent switching performance enable it to operate reliably in automotive environments and withstand extreme conditions.
4. **Photovoltaic Systems**: J664-VB is also widely used in solar inverters. Its excellent conductivity and voltage resistance can effectively manage the high voltage output by solar panels and improve the overall energy conversion efficiency.
Through these application examples, J664-VB demonstrates its important role in the field of high voltage and high efficiency, providing a reliable solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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