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IXTQ50N20P-VB Product details
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Product Introduction: IXTQ50N20P-VB
IXTQ50N20P-VB is a high-performance single N-channel MOSFET in TO3P package. This MOSFET has excellent current carrying capacity and low on-resistance, and is particularly suitable for applications requiring high voltage and high current. Its design uses Trench technology, which provides good switching performance and thermal stability, making it perform well in modern power management and conversion.
IXTQ50N20P-VB is a high-performance single N-channel MOSFET in TO3P package. This MOSFET has excellent current carrying capacity and low on-resistance, and is particularly suitable for applications requiring high voltage and high current. Its design uses Trench technology, which provides good switching performance and thermal stability, making it perform well in modern power management and conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 3V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Model**: IXTQ50N20P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench technology
- **Model**: IXTQ50N20P-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples:
1. **Power management**:
IXTQ50N20P-VB is ideal for switch mode power supplies (SMPS) and DC-DC converters. Its high withstand voltage and low on-resistance enable it to effectively reduce power consumption in high-efficiency power conversion.
2. **Electric vehicles**:
This MOSFET can be used in power modules and motor drive circuits of electric vehicles to provide stable power control and high current transmission, meeting the requirements of electric vehicles for high efficiency and reliability.
3. **Industrial control**:
In industrial automation and control systems, IXTQ50N20P-VB can be used as a core component of the drive circuit to control motors and other loads, improving the overall performance and response speed of the system.
4. **Battery management system**:
This MOSFET is suitable for battery management systems (BMS), which can effectively manage the charging and discharging process to ensure the safety and efficient operation of the battery.
These applications show that IXTQ50N20P-VB has wide applicability and market demand in various high-voltage and high-current electronic devices.
1. **Power management**:
IXTQ50N20P-VB is ideal for switch mode power supplies (SMPS) and DC-DC converters. Its high withstand voltage and low on-resistance enable it to effectively reduce power consumption in high-efficiency power conversion.
2. **Electric vehicles**:
This MOSFET can be used in power modules and motor drive circuits of electric vehicles to provide stable power control and high current transmission, meeting the requirements of electric vehicles for high efficiency and reliability.
3. **Industrial control**:
In industrial automation and control systems, IXTQ50N20P-VB can be used as a core component of the drive circuit to control motors and other loads, improving the overall performance and response speed of the system.
4. **Battery management system**:
This MOSFET is suitable for battery management systems (BMS), which can effectively manage the charging and discharging process to ensure the safety and efficient operation of the battery.
These applications show that IXTQ50N20P-VB has wide applicability and market demand in various high-voltage and high-current electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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