IRLW640-VB Product details
Product introduction:
IRLW640-VB is a high-voltage single N-channel MOSFET in TO263 package, designed based on Trench technology, with excellent conduction and switching characteristics. The device has a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 3V. At a gate drive voltage of 10V, the on-resistance is 48mΩ. The maximum drain current (ID) is 40A, making it particularly suitable for high-voltage, high-power applications such as industrial power supplies, power inverters, and motor drives. Its low loss characteristics and high efficiency make it particularly ideal in scenarios requiring efficient power conversion.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Maximum power dissipation (PD)**: 300W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 56nC (typical)
- **Reverse recovery time (trr)**: 140ns (typical value)
- **Package pins**: Three pins (Drain, Gate, Source)
- **Surge resistance**: Support high voltage circuit design
- **ESD protection**: High ESD protection, suitable for industrial scenarios
Domain and module applications:
1. **Industrial power supply**
- The IRLW640-VB's 200V high withstand voltage and 40A high current carrying capacity make it suitable for industrial power systems, especially in DC-DC converters and AC-DC power modules. Its low on-resistance can effectively reduce power loss and improve power conversion efficiency.
2. **Power inverter**
- In inverter design, this MOSFET can be used for high-voltage motor drives and solar inverter modules. Its high switching speed and low loss characteristics can improve the overall efficiency of the system, especially for medium and high power inverter applications.
3. **Motor drive**
- The IRLW640-VB is an ideal choice for high-power motor drives and is suitable for motor control modules in industrial machinery. It can maintain stable operation at high voltage and high current, ensuring reliability and efficiency when the motor is running.
4. **New Energy Applications**
- In new energy systems, such as electric vehicle charging modules and wind and solar power conversion modules, IRLW640-VB can help achieve efficient energy transmission and storage through its efficient power handling capabilities.
IRLW640-VB has high voltage carrying capacity, low on-resistance and high current support, making it excellent in high-voltage, high-efficiency energy conversion applications. Whether in industrial control, new energy fields, or high-voltage power management, it can provide excellent performance and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image