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IRFZ34NSTR-VB Product details
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1. IRFZ34NSTR-VB Product Introduction
IRFZ34NSTR-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and high efficiency. This MOSFET has a low on-resistance (RDS(ON)=35mΩ@VGS=4.5V and 32mΩ@VGS=10V) and can operate stably at a maximum drain current of 50A. Its 60V drain-source voltage (VDS) and 20V gate-source voltage (VGS) make it suitable for a variety of power switching applications. Based on Trench process technology, IRFZ34NSTR-VB ensures high efficiency and low power consumption while providing excellent switching performance and power density. This device is particularly suitable for applications requiring high current, high efficiency and low switching losses.
IRFZ34NSTR-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and high efficiency. This MOSFET has a low on-resistance (RDS(ON)=35mΩ@VGS=4.5V and 32mΩ@VGS=10V) and can operate stably at a maximum drain current of 50A. Its 60V drain-source voltage (VDS) and 20V gate-source voltage (VGS) make it suitable for a variety of power switching applications. Based on Trench process technology, IRFZ34NSTR-VB ensures high efficiency and low power consumption while providing excellent switching performance and power density. This device is particularly suitable for applications requiring high current, high efficiency and low switching losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of IRFZ34NSTR-VB
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Input capacitance (Ciss)**: About 1500pF, optimized switching speed
- **Power consumption**: Typical power consumption is low, the specific value depends on the heat dissipation conditions
- **Switching speed**: Suitable for fast switching operations
- **Operating temperature**: -55°C to +175°C
- **Breakdown voltage**: 60V
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Input capacitance (Ciss)**: About 1500pF, optimized switching speed
- **Power consumption**: Typical power consumption is low, the specific value depends on the heat dissipation conditions
- **Switching speed**: Suitable for fast switching operations
- **Operating temperature**: -55°C to +175°C
- **Breakdown voltage**: 60V
Domain and module applications：
3. Application fields and modules of IRFZ34NSTR-VB
1. **Power management**
IRFZ34NSTR-VB performs well in DC-DC converters and switching power supplies (SMPS), and is suitable for application scenarios that require high current and low conduction loss. This MOSFET can be used to improve power conversion efficiency, reduce power consumption and heat, and is widely used in computer power supplies, industrial power supplies, and battery management systems.
2. **Motor control**
In motor drive applications, such as brushless DC motor drivers and stepper motor controllers, the high current handling capability and low on-resistance of IRFZ34NSTR-VB make it an ideal choice. It can effectively reduce power consumption and heat, and improve the efficiency and reliability of motor systems.
3. **Automotive electronics**
IRFZ34NSTR-VB is ideal for high-load switching and power management functions in automotive electronics, including electronic control units (ECUs) and lighting systems. Its high temperature resistance and high current capability ensure its stable operation in automotive environments.
4. **Solar Inverter**
In solar inverters, this MOSFET is used for efficient power switches that can handle high currents from solar panels, optimize the DC to AC conversion process, and improve the overall efficiency and stability of the system.
5. **LED Driver**
In LED lighting systems, IRFZ34NSTR-VB is used for current regulation and switch control, which helps achieve stable light output while reducing energy loss and heat generation, thereby improving the performance and life of LED lamps.
With its superior electrical characteristics and diverse application capabilities, IRFZ34NSTR-VB has become an important component in various high-performance electronic systems and is suitable for applications requiring high current and high efficiency.
1. **Power management**
IRFZ34NSTR-VB performs well in DC-DC converters and switching power supplies (SMPS), and is suitable for application scenarios that require high current and low conduction loss. This MOSFET can be used to improve power conversion efficiency, reduce power consumption and heat, and is widely used in computer power supplies, industrial power supplies, and battery management systems.
2. **Motor control**
In motor drive applications, such as brushless DC motor drivers and stepper motor controllers, the high current handling capability and low on-resistance of IRFZ34NSTR-VB make it an ideal choice. It can effectively reduce power consumption and heat, and improve the efficiency and reliability of motor systems.
3. **Automotive electronics**
IRFZ34NSTR-VB is ideal for high-load switching and power management functions in automotive electronics, including electronic control units (ECUs) and lighting systems. Its high temperature resistance and high current capability ensure its stable operation in automotive environments.
4. **Solar Inverter**
In solar inverters, this MOSFET is used for efficient power switches that can handle high currents from solar panels, optimize the DC to AC conversion process, and improve the overall efficiency and stability of the system.
5. **LED Driver**
In LED lighting systems, IRFZ34NSTR-VB is used for current regulation and switch control, which helps achieve stable light output while reducing energy loss and heat generation, thereby improving the performance and life of LED lamps.
With its superior electrical characteristics and diverse application capabilities, IRFZ34NSTR-VB has become an important component in various high-performance electronic systems and is suitable for applications requiring high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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