IRFU2607ZPBF-VB Product details
Product introduction:
**IRFU2607ZPBF-VB** is a high-performance N-channel MOSFET packaged in TO251. It uses advanced Trench technology and is designed to handle high current and medium voltage applications. This MOSFET has a drain-source withstand voltage of 80V and a gate-source withstand voltage of 20V, suitable for medium voltage switching operations. The gate threshold voltage of IRFU2607ZPBF-VB is 3V, allowing it to start at a lower gate voltage. Its on-resistance is 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V. It can handle a drain current of up to 75A and is very suitable for applications requiring high current and high switching efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: IRFU2607ZPBF-VB
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ (at VGS=4.5V)
- 6.4mΩ (at VGS=10V)
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications:
1. **High current switching power supply**:
IRFU2607ZPBF-VB is ideal for high current switching power supplies, such as high power DC-DC converters and power management systems. Its low on-resistance and high current handling capability enable it to switch efficiently in high current environments, reduce power losses, and improve system efficiency.
2. **Motor drive system**:
In motor control and drive applications, this MOSFET can effectively control the start and stop and speed regulation of the motor. Its high current capability and low on-resistance make it ideal for medium power motor drive systems, providing stable and reliable switching control.
3. **Power regulation module**:
IRFU2607ZPBF-VB is suitable for power regulation modules, such as power regulation and conversion circuits. Its high current handling capability and low on-resistance ensure efficient power regulation and conversion performance, suitable for applications requiring high switching efficiency.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can be used as a switching element for overcurrent protection and power management. Its high current handling capability and low on-resistance help protect the power system and other key components from overcurrent and overheating.
5. **Automotive electronics**:
In automotive electronic systems, especially in applications that need to handle high currents, the IRFU2607ZPBF-VB can provide reliable switching functions. It is suitable for automotive power management systems, electric vehicle drive systems, and other high-current control modules to ensure stability and efficiency in automotive environments.
With its high current capability and low on-resistance, the IRFU2607ZPBF-VB has demonstrated excellent performance in applications such as high-current switching power supplies, motor drives, power conditioning, power protection, and automotive electronics, ensuring efficient operation and reliability of the system.
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