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IRFR812PBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IRFR812PBF-VB is a high voltage N-channel MOSFET in TO-252 package. This device uses Planar technology, has a drain-source voltage of 650V and a drain current capability of 4A, and is suitable for high voltage power switching and power conversion applications. Its relatively high on-resistance makes it suitable for applications that require high withstand voltage, but it can still provide stable and reliable performance when the current load is not extreme.
IRFR812PBF-VB is a high voltage N-channel MOSFET in TO-252 package. This device uses Planar technology, has a drain-source voltage of 650V and a drain current capability of 4A, and is suitable for high voltage power switching and power conversion applications. Its relatively high on-resistance makes it suitable for applications that require high withstand voltage, but it can still provide stable and reliable performance when the current load is not extreme.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Planar technology
- **Power dissipation**: Suitable for heat dissipation design in high voltage applications
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Planar technology
- **Power dissipation**: Suitable for heat dissipation design in high voltage applications
Domain and module applications：
3. Application fields and modules
1. **High voltage power conversion**: The 650V drain-source voltage of IRFR812PBF-VB makes it particularly suitable for high voltage power conversion applications such as switch mode power supplies (SMPS) and inverters. These applications require devices to withstand high voltages and perform stable switching operations.
2. **Power switch**: Due to its high voltage withstand capability and moderate current load, IRFR812PBF-VB is suitable for use as a power switch in high voltage circuits. For example, in high voltage DC power switches or power conditioning modules, it can provide reliable switching control.
3. **Motor drive**: Although the on-resistance of this MOSFET is relatively high, its high voltage withstand characteristics make it still useful in some high voltage motor drive applications, especially in scenarios where high voltage isolation and protection are required.
4. **High voltage protection circuit**: In high voltage circuits, IRFR812PBF-VB can be used as a protection switch for overvoltage protection and safe disconnection functions to ensure the stability and safety of the circuit under abnormal conditions.
These application areas demonstrate the wide applicability of IRFR812PBF-VB in high voltage environments, especially in power management and power switching scenarios that require high voltage resistance and stable performance.
1. **High voltage power conversion**: The 650V drain-source voltage of IRFR812PBF-VB makes it particularly suitable for high voltage power conversion applications such as switch mode power supplies (SMPS) and inverters. These applications require devices to withstand high voltages and perform stable switching operations.
2. **Power switch**: Due to its high voltage withstand capability and moderate current load, IRFR812PBF-VB is suitable for use as a power switch in high voltage circuits. For example, in high voltage DC power switches or power conditioning modules, it can provide reliable switching control.
3. **Motor drive**: Although the on-resistance of this MOSFET is relatively high, its high voltage withstand characteristics make it still useful in some high voltage motor drive applications, especially in scenarios where high voltage isolation and protection are required.
4. **High voltage protection circuit**: In high voltage circuits, IRFR812PBF-VB can be used as a protection switch for overvoltage protection and safe disconnection functions to ensure the stability and safety of the circuit under abnormal conditions.
These application areas demonstrate the wide applicability of IRFR812PBF-VB in high voltage environments, especially in power management and power switching scenarios that require high voltage resistance and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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