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IRFP3710PBF-VB Product details
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IRFP3710PBF-VB Product Introduction
IRFP3710PBF-VB is a high-performance single-channel N-type MOSFET with a TO247 package type. This MOSFET is designed for medium and high voltage applications, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 1.8V, and its on-resistance (RDS(ON)) is 18mΩ (at VGS=10V), supporting a continuous drain current of up to 72A. This MOSFET uses Trench technology, providing excellent switching performance and low power consumption, making it ideal for applications requiring high efficiency and high current handling.
IRFP3710PBF-VB is a high-performance single-channel N-type MOSFET with a TO247 package type. This MOSFET is designed for medium and high voltage applications, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 1.8V, and its on-resistance (RDS(ON)) is 18mΩ (at VGS=10V), supporting a continuous drain current of up to 72A. This MOSFET uses Trench technology, providing excellent switching performance and low power consumption, making it ideal for applications requiring high efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP3710PBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 72A
- **Technology**: Trench
- **Maximum power consumption**: Power consumption is limited by packaging and thermal management, depending on operating conditions and thermal design.
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 72A
- **Technology**: Trench
- **Maximum power consumption**: Power consumption is limited by packaging and thermal management, depending on operating conditions and thermal design.
Domain and module applications：
Applicable fields and modules
The high current capability and low on-resistance of the IRFP3710PBF-VB MOSFET make it very suitable for the following fields and modules:
1. **High-efficiency switching power supply**: This MOSFET performs well in switching power supply applications, especially medium and low voltage switching power supplies. The drain-source voltage of 100V and the on-resistance of 18mΩ ensure high efficiency and low power loss, making it an ideal choice for DC-DC converters.
2. **Electric vehicles and motor drive systems**: The high current capability (72A) of the IRFP3710PBF-VB makes it suitable for motor drive systems of electric vehicles or high-power motor applications. Its low RDS(ON) characteristics help reduce heat generation and improve the overall efficiency and reliability of the system.
3. **Inverter**: In inverter systems, such as solar inverters, this MOSFET can effectively handle high currents and medium voltages, ensuring efficient power conversion and stable inverter performance.
4. **Power Amplifier**: This MOSFET can be used in high-power power amplifier circuits to handle medium-to-high voltage DC or AC power supplies. Its high current handling capability and low on-resistance help ensure high efficiency and stable operation of the power amplifier.
5. **Battery Management System**: In a battery management system, the IRFP3710PBF-VB can be used as a battery protection and current control switch. Its high current capability and low on-resistance ensure efficient current control and system protection, and is particularly suitable for high current charge and discharge control.
The high current capability and low on-resistance of the IRFP3710PBF-VB MOSFET make it very suitable for the following fields and modules:
1. **High-efficiency switching power supply**: This MOSFET performs well in switching power supply applications, especially medium and low voltage switching power supplies. The drain-source voltage of 100V and the on-resistance of 18mΩ ensure high efficiency and low power loss, making it an ideal choice for DC-DC converters.
2. **Electric vehicles and motor drive systems**: The high current capability (72A) of the IRFP3710PBF-VB makes it suitable for motor drive systems of electric vehicles or high-power motor applications. Its low RDS(ON) characteristics help reduce heat generation and improve the overall efficiency and reliability of the system.
3. **Inverter**: In inverter systems, such as solar inverters, this MOSFET can effectively handle high currents and medium voltages, ensuring efficient power conversion and stable inverter performance.
4. **Power Amplifier**: This MOSFET can be used in high-power power amplifier circuits to handle medium-to-high voltage DC or AC power supplies. Its high current handling capability and low on-resistance help ensure high efficiency and stable operation of the power amplifier.
5. **Battery Management System**: In a battery management system, the IRFP3710PBF-VB can be used as a battery protection and current control switch. Its high current capability and low on-resistance ensure efficient current control and system protection, and is particularly suitable for high current charge and discharge control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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