中文
English
IRFP140NPBF-VB Product details
Back to previous pageProduct introduction：
1. IRFP140NPBF-VB Product Introduction
IRFP140NPBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.8V, and the on-resistance (RDS(ON)) is 35mΩ when VGS is 10V. This MOSFET has a maximum current carrying capacity of 85A and is manufactured using trench technology. These features make it suitable for high-current, high-efficiency switching applications such as power conversion, power amplification, and motor drive.
IRFP140NPBF-VB is a single N-channel MOSFET in TO247 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.8V, and the on-resistance (RDS(ON)) is 35mΩ when VGS is 10V. This MOSFET has a maximum current carrying capacity of 85A and is manufactured using trench technology. These features make it suitable for high-current, high-efficiency switching applications such as power conversion, power amplification, and motor drive.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP140NPBF-VB detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ@VGS=10V
- **Current (ID)**: 85A
- **Technology type**: Trench
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 320A
- **Input capacitance (Ciss)**: 4500pF
- **Output capacitance (Coss)**: 450pF
- **Reverse recovery time (trr)**: 110ns
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ@VGS=10V
- **Current (ID)**: 85A
- **Technology type**: Trench
- **Power consumption**: 94W (maximum power consumption depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum pulsed drain current**: 320A
- **Input capacitance (Ciss)**: 4500pF
- **Output capacitance (Coss)**: 450pF
- **Reverse recovery time (trr)**: 110ns
Domain and module applications：
3. Application fields and module examples
1. **Power management system**
IRFP140NPBF-VB is suitable for switch control in high-power power management systems. Its high current carrying capacity and low on-resistance make it an ideal switching element in DC-DC converters or AC-DC power supplies. This helps improve system efficiency and reduce energy losses.
2. **Motor drive**
In motor drive applications, such as electric vehicles (EV) or industrial motor drive systems, IRFP140NPBF-VB can be used as a high-current switching device to control the drive current of the motor. Its high current capacity and low RDS(ON) characteristics ensure efficient motor control and long-term stable operation.
3. **Power amplifier**
In power amplifier circuits, this MOSFET can be used for power switching and gain control. Its high current carrying capacity and good conductivity make it suitable for high-power applications such as audio amplifiers and RF amplifiers.
4. **Inverter**
In solar inverter and other inverter applications, IRFP140NPBF-VB can effectively handle high current and high power loads. Its excellent switching performance and high voltage resistance ensure that the inverter remains efficient and reliable during high power conversion.
1. **Power management system**
IRFP140NPBF-VB is suitable for switch control in high-power power management systems. Its high current carrying capacity and low on-resistance make it an ideal switching element in DC-DC converters or AC-DC power supplies. This helps improve system efficiency and reduce energy losses.
2. **Motor drive**
In motor drive applications, such as electric vehicles (EV) or industrial motor drive systems, IRFP140NPBF-VB can be used as a high-current switching device to control the drive current of the motor. Its high current capacity and low RDS(ON) characteristics ensure efficient motor control and long-term stable operation.
3. **Power amplifier**
In power amplifier circuits, this MOSFET can be used for power switching and gain control. Its high current carrying capacity and good conductivity make it suitable for high-power applications such as audio amplifiers and RF amplifiers.
4. **Inverter**
In solar inverter and other inverter applications, IRFP140NPBF-VB can effectively handle high current and high power loads. Its excellent switching performance and high voltage resistance ensure that the inverter remains efficient and reliable during high power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
