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IRF9530STRR-VB Product details
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The IRF9530STRR-VB is a high voltage P-channel MOSFET in a TO263 package with a drain-source voltage (VDS) up to -100V and a gate drive voltage (VGS) of ±20V. It has a gate threshold voltage (Vth) of -2V and is designed to operate stably in high voltage, negative voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 240mΩ @ VGS = 4.5V and 200mΩ @ VGS = 10V, ensuring its excellent performance in efficient power management and low power consumption applications. With advanced Trench technology, the IRF9530STRR-VB provides reliable switching performance in high voltage applications.
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The IRF9530STRR-VB is a high voltage P-channel MOSFET in a TO263 package with a drain-source voltage (VDS) up to -100V and a gate drive voltage (VGS) of ±20V. It has a gate threshold voltage (Vth) of -2V and is designed to operate stably in high voltage, negative voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 240mΩ @ VGS = 4.5V and 200mΩ @ VGS = 10V, ensuring its excellent performance in efficient power management and low power consumption applications. With advanced Trench technology, the IRF9530STRR-VB provides reliable switching performance in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
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- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -12A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: TO263 package has good heat dissipation performance and low parasitic inductance, suitable for high power applications.
**
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -12A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: TO263 package has good heat dissipation performance and low parasitic inductance, suitable for high power applications.
**
Domain and module applications：
**
1. **High-voltage Switching Power Supply (SMPS)**
The IRF9530STRR-VB is particularly suitable for use in high-voltage switching power supply designs, capable of handling voltages up to -100V. Its low on-resistance and high current handling capabilities enable efficient performance in power conversion and regulator applications.
2. **Load Switch and Power Control Module**
This MOSFET can be used in high-voltage load switching applications, such as load control modules in industrial automation systems. It is capable of handling high voltages and ensuring low-power operation, suitable for systems that require reliable switching and efficient current management.
3. **Power Protection Circuit**
The IRF9530STRR-VB is suitable for use in power systems that require overvoltage protection. In the power protection circuits of high-voltage battery management systems or sensitive electronic devices, it can effectively prevent overcurrent or voltage fluctuations from damaging the system.
4. **Motor Drive Control**
This MOSFET performs well in motor drive systems, especially in applications that require P-channel MOSFETs. Its high voltage withstand capability and stable switching performance make it suitable for use in drive circuits for small motors or industrial equipment.
1. **High-voltage Switching Power Supply (SMPS)**
The IRF9530STRR-VB is particularly suitable for use in high-voltage switching power supply designs, capable of handling voltages up to -100V. Its low on-resistance and high current handling capabilities enable efficient performance in power conversion and regulator applications.
2. **Load Switch and Power Control Module**
This MOSFET can be used in high-voltage load switching applications, such as load control modules in industrial automation systems. It is capable of handling high voltages and ensuring low-power operation, suitable for systems that require reliable switching and efficient current management.
3. **Power Protection Circuit**
The IRF9530STRR-VB is suitable for use in power systems that require overvoltage protection. In the power protection circuits of high-voltage battery management systems or sensitive electronic devices, it can effectively prevent overcurrent or voltage fluctuations from damaging the system.
4. **Motor Drive Control**
This MOSFET performs well in motor drive systems, especially in applications that require P-channel MOSFETs. Its high voltage withstand capability and stable switching performance make it suitable for use in drive circuits for small motors or industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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