IRF7756TRPBF-VB Product details
Product introduction:
IRF7756TRPBF-VB is a high-performance dual P-channel MOSFET in TSSOP8 package, designed for negative voltage and high-efficiency switching applications. It combines two P-channel MOSFETs and is suitable for environments that require negative voltage control. The maximum drain-source voltage (VDS) is -30V, enabling it to operate reliably at higher negative voltages. The threshold voltage (Vth) of this MOSFET is -1.7V, supporting switching operations at low gate voltages. The on-resistance (RDS(ON)) of IRF7756TRPBF-VB is 55mΩ@VGS=4.5V and 36mΩ@VGS=10V, ensuring low switching losses and high efficiency. Using the Trench process, this MOSFET provides excellent switching performance and thermal management capabilities, and is widely used in various scenarios requiring high-efficiency switching.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
- **Package type**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Drain current (ID)**: -5.2A
- **Technology**: Trench process
- **Switching characteristics**: Suitable for negative voltage high-efficiency switching applications
- **Power loss**: Low on-resistance helps reduce switching losses and improve system efficiency
Domain and module applications:
1. **Negative voltage power switch**:
IRF7756TRPBF-VB can be used for negative voltage power switch, such as as a switching element in a negative voltage DC-DC converter. It can effectively control the switching of the power supply in a negative voltage environment to ensure the stability and efficiency of the power supply.
2. **Load switch**:
In negative voltage load switch applications, this MOSFET can be used as a switch control element for the load. Especially in portable devices or battery-powered systems, its low on-resistance and high current capability can effectively control the load switch and improve the overall energy efficiency of the system.
3. **Motor drive system**:
IRF7756TRPBF-VB is suitable for negative voltage motor drive applications. Its low on-resistance and reliable switching characteristics enable it to provide stable control during the start-up and operation of the motor, and is suitable for motor control and drive circuits.
4. **Battery Management System**:
In a battery management system, this MOSFET can be used as a switch and protection element for the battery. Especially in negative voltage environments, such as during the charging and discharging of lithium-ion batteries, the IRF7756TRPBF-VB provides efficient switching functions to help protect the battery and optimize battery performance.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image