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IPD80N04S3-06-VB Product details
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1. IPD80N04S3-06-VB Product Introduction:
IPD80N04S3-06-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. Its maximum drain-source voltage (VDS) is 40V, and the gate-source voltage (VGS) range is ±20V. The turn-on threshold voltage (Vth) is 2.5V, and Trench technology is used to achieve low on-resistance and high current handling capability. The on-resistance (RDS(ON)) of IPD80N04S3-06-VB is 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), and the maximum drain current is 85A. It is suitable for application scenarios requiring high current and low conduction loss, providing excellent switching performance and efficiency.
IPD80N04S3-06-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. Its maximum drain-source voltage (VDS) is 40V, and the gate-source voltage (VGS) range is ±20V. The turn-on threshold voltage (Vth) is 2.5V, and Trench technology is used to achieve low on-resistance and high current handling capability. The on-resistance (RDS(ON)) of IPD80N04S3-06-VB is 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), and the maximum drain current is 85A. It is suitable for application scenarios requiring high current and low conduction loss, providing excellent switching performance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD80N04S3-06-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: power management, high-efficiency switching, motor drive, DC-DC converters, etc.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: power management, high-efficiency switching, motor drive, DC-DC converters, etc.
Domain and module applications：
3. Application fields and module examples:
1. **Power management**:
The low on-resistance and high current handling capability of IPD80N04S3-06-VB make it very suitable for power management systems. In DC-DC converters and power modules, this MOSFET can efficiently handle large current loads, provide stable current switching and low power consumption, and optimize the overall efficiency of the system.
2. **High-efficiency switching**:
Due to its low on-resistance (5mΩ), IPD80N04S3-06-VB is very suitable for switching applications that require high efficiency and low losses. It can provide high current carrying capacity at low voltage and is widely used in switching power supplies, motor drive control and other high-power switching circuits.
3. **Motor drive**:
In motor drive circuits, IPD80N04S3-06-VB provides stable current switching capability. Its 85A drain current capability enables it to handle high current loads, provide efficient power conversion and control in motor drive and control modules, and support high-performance motor operation.
4. **DC-DC Converter**:
In DC-DC converters, the high current and low on-resistance performance of IPD80N04S3-06-VB are key. It can effectively reduce power loss, improve converter efficiency, and ensure stable operation under high load conditions, suitable for power conversion needs in various electronic devices.
The high current handling capability and low on-resistance of IPD80N04S3-06-VB enable it to perform well in a variety of high-efficiency switching applications, providing a reliable solution for various power management and drive systems.
1. **Power management**:
The low on-resistance and high current handling capability of IPD80N04S3-06-VB make it very suitable for power management systems. In DC-DC converters and power modules, this MOSFET can efficiently handle large current loads, provide stable current switching and low power consumption, and optimize the overall efficiency of the system.
2. **High-efficiency switching**:
Due to its low on-resistance (5mΩ), IPD80N04S3-06-VB is very suitable for switching applications that require high efficiency and low losses. It can provide high current carrying capacity at low voltage and is widely used in switching power supplies, motor drive control and other high-power switching circuits.
3. **Motor drive**:
In motor drive circuits, IPD80N04S3-06-VB provides stable current switching capability. Its 85A drain current capability enables it to handle high current loads, provide efficient power conversion and control in motor drive and control modules, and support high-performance motor operation.
4. **DC-DC Converter**:
In DC-DC converters, the high current and low on-resistance performance of IPD80N04S3-06-VB are key. It can effectively reduce power loss, improve converter efficiency, and ensure stable operation under high load conditions, suitable for power conversion needs in various electronic devices.
The high current handling capability and low on-resistance of IPD80N04S3-06-VB enable it to perform well in a variety of high-efficiency switching applications, providing a reliable solution for various power management and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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