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IPB100N06S3-03-VB Product details
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1. IPB100N06S3-03-VB Product Introduction:
IPB100N06S3-03-VB is a high-performance N-channel MOSFET produced by Infineon, using TO263 package. This MOSFET is designed for high-current, high-efficiency power management applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) withstand voltage of ±20V. Its on-resistance (RDS(ON)) is 7mΩ at VGS=4.5V and only 2.5mΩ at VGS=10V. The maximum drain current (ID) of this MOSFET can reach 270A. It uses advanced Trench technology, providing excellent switching speed and low power consumption characteristics, and is suitable for scenarios requiring high power handling and efficient power conversion.
IPB100N06S3-03-VB is a high-performance N-channel MOSFET produced by Infineon, using TO263 package. This MOSFET is designed for high-current, high-efficiency power management applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) withstand voltage of ±20V. Its on-resistance (RDS(ON)) is 7mΩ at VGS=4.5V and only 2.5mΩ at VGS=10V. The maximum drain current (ID) of this MOSFET can reach 270A. It uses advanced Trench technology, providing excellent switching speed and low power consumption characteristics, and is suitable for scenarios requiring high power handling and efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IPB100N06S3-03-VB Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 270A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 270A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules:
1. **High-efficiency power supply system**:
IPB100N06S3-03-VB is very suitable for use in high-efficiency power supply systems, such as server power supplies and communication equipment power supplies. Its extremely low on-resistance and high current capability can effectively reduce power consumption during power conversion and improve overall system efficiency. It performs particularly well in power modules that require high power handling and stable performance.
2. **Electric vehicle (EV) drive system**:
In the drive system of electric vehicles, this MOSFET is capable of handling high currents and high voltages, and is suitable for motor control and battery management systems. Its high drain current capability and low on-resistance ensure the efficiency and stability of electric vehicles under high-power operation, improving the overall performance of the system.
3. **High-power DC-DC converter**:
IPB100N06S3-03-VB has significant advantages in high-power DC-DC converter applications. Its low on-resistance and high current capability enable it to provide efficient power conversion under high load conditions, and is widely used in industrial automation equipment, power supply systems and other fields, providing stable and efficient power solutions.
4. **High-performance battery management system**:
This MOSFET is also suitable for battery management systems, especially in situations where high current handling is required. Its high conductivity and low power consumption characteristics enable it to perform well in battery charge and discharge management, improve the energy efficiency and reliability of the battery system, and is widely used in battery packs, UPS systems, etc.
Through these application examples, IPB100N06S3-03-VB demonstrates its wide applicability in high voltage, high current and high efficiency applications, providing a reliable solution for power management and high power conversion.
1. **High-efficiency power supply system**:
IPB100N06S3-03-VB is very suitable for use in high-efficiency power supply systems, such as server power supplies and communication equipment power supplies. Its extremely low on-resistance and high current capability can effectively reduce power consumption during power conversion and improve overall system efficiency. It performs particularly well in power modules that require high power handling and stable performance.
2. **Electric vehicle (EV) drive system**:
In the drive system of electric vehicles, this MOSFET is capable of handling high currents and high voltages, and is suitable for motor control and battery management systems. Its high drain current capability and low on-resistance ensure the efficiency and stability of electric vehicles under high-power operation, improving the overall performance of the system.
3. **High-power DC-DC converter**:
IPB100N06S3-03-VB has significant advantages in high-power DC-DC converter applications. Its low on-resistance and high current capability enable it to provide efficient power conversion under high load conditions, and is widely used in industrial automation equipment, power supply systems and other fields, providing stable and efficient power solutions.
4. **High-performance battery management system**:
This MOSFET is also suitable for battery management systems, especially in situations where high current handling is required. Its high conductivity and low power consumption characteristics enable it to perform well in battery charge and discharge management, improve the energy efficiency and reliability of the battery system, and is widely used in battery packs, UPS systems, etc.
Through these application examples, IPB100N06S3-03-VB demonstrates its wide applicability in high voltage, high current and high efficiency applications, providing a reliable solution for power management and high power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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