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HY3215PM-VB Product details
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1. HY3215PM-VB Product Introduction
HY3215PM-VB is a single N-channel MOSFET in TO3P package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 150V, capable of handling drain currents up to 90A, suitable for high power switching and power conversion applications. The device has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of 3V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 17mΩ, and it uses advanced Trench technology to ensure low conduction losses and high efficiency. HY3215PM-VB is suitable for a variety of high power applications such as power management, motor control, and industrial automation.
HY3215PM-VB is a single N-channel MOSFET in TO3P package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 150V, capable of handling drain currents up to 90A, suitable for high power switching and power conversion applications. The device has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of 3V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 17mΩ, and it uses advanced Trench technology to ensure low conduction losses and high efficiency. HY3215PM-VB is suitable for a variety of high power applications such as power management, motor control, and industrial automation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 150V | 3V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. HY3215PM-VB Detailed parameter description
1. **Package type**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 150V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 17mΩ@VGS=10V
7. **Drain current (ID)**: 90A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: 300A (10us)
1. **Package type**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 150V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 17mΩ@VGS=10V
7. **Drain current (ID)**: 90A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: 300A (10us)
Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle charger**: HY3215PM-VB can handle voltages up to 150V and currents up to 90A, making it ideal for high-power chargers for electric vehicles. In such applications, the MOSFET can be used as a switching element to help the power module achieve efficient, low-loss power conversion and improve charging efficiency.
2. **Photovoltaic inverter**: This MOSFET can be used in the inverter of a photovoltaic power generation system. Its high withstand voltage and high current capabilities enable it to operate reliably under high voltage conditions, provide stable power output, and help improve the conversion efficiency of solar power generation systems.
3. **Industrial power system**: HY3215PM-VB is ideal for DC-DC converters and switching power supply applications in industrial power systems. Its low RDS(ON) and high power handling capabilities enable it to cope with high load demands in industrial equipment, effectively reduce power consumption, and improve the overall efficiency of the system.
4. **Motor drive control**: This MOSFET can be used in high-power motor drive systems, such as motor control modules in industrial automation and household appliances. Its high current handling capability and high voltage resistance ensure stable motor drive, reduce energy loss, and improve motor operation efficiency.
The high voltage resistance, high current, and low conduction loss characteristics of HY3215PM-VB make it widely used in various high-power conversion and power management applications.
1. **Electric vehicle charger**: HY3215PM-VB can handle voltages up to 150V and currents up to 90A, making it ideal for high-power chargers for electric vehicles. In such applications, the MOSFET can be used as a switching element to help the power module achieve efficient, low-loss power conversion and improve charging efficiency.
2. **Photovoltaic inverter**: This MOSFET can be used in the inverter of a photovoltaic power generation system. Its high withstand voltage and high current capabilities enable it to operate reliably under high voltage conditions, provide stable power output, and help improve the conversion efficiency of solar power generation systems.
3. **Industrial power system**: HY3215PM-VB is ideal for DC-DC converters and switching power supply applications in industrial power systems. Its low RDS(ON) and high power handling capabilities enable it to cope with high load demands in industrial equipment, effectively reduce power consumption, and improve the overall efficiency of the system.
4. **Motor drive control**: This MOSFET can be used in high-power motor drive systems, such as motor control modules in industrial automation and household appliances. Its high current handling capability and high voltage resistance ensure stable motor drive, reduce energy loss, and improve motor operation efficiency.
The high voltage resistance, high current, and low conduction loss characteristics of HY3215PM-VB make it widely used in various high-power conversion and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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