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HUF76137S3ST-VB Product details
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HUF76137S3ST-VB MOSFET Product Introduction
HUF76137S3ST-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for applications requiring low on-resistance and high current handling capability. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for operation in a variety of high-voltage environments. Its extremely low on-resistance, 2.7mΩ (@VGS=4.5V) and 2.4mΩ (@VGS=10V), respectively, ensures excellent current transfer performance and low power loss. The HUF76137S3ST-VB with Trench technology also has fast switching characteristics, suitable for high-frequency applications.
HUF76137S3ST-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for applications requiring low on-resistance and high current handling capability. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for operation in a variety of high-voltage environments. Its extremely low on-resistance, 2.7mΩ (@VGS=4.5V) and 2.4mΩ (@VGS=10V), respectively, ensures excellent current transfer performance and low power loss. The HUF76137S3ST-VB with Trench technology also has fast switching characteristics, suitable for high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUF76137S3ST-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
HUF76137S3ST-VB MOSFET is widely used in the following fields and modules:
1. **High-efficiency power management**: Due to its ultra-low on-resistance and high current handling capability, HUF76137S3ST-VB is ideal for high-efficiency power management modules such as DC-DC converters and switching power supplies. This MOSFET can significantly reduce energy loss, improve conversion efficiency, and perform stably under high load conditions.
2. **Motor control system**: In motor control applications, the high current capability and low on-resistance of HUF76137S3ST-VB make it suitable for motor drive circuits. It is able to switch quickly and provide stable current output, which is suitable for various motor control systems such as electric vehicles and industrial drive systems.
3. **Automotive electronic systems**: In automotive electronic systems, HUF76137S3ST-VB can be used in various applications, including battery management systems, on-board chargers, and electronic stability programs. Its high voltage resistance and high current handling capabilities enable it to cope with the high power demands and harsh conditions in the automotive environment.
4. **High-frequency switching circuit**: Thanks to the fast switching characteristics brought by Trench technology, HUF76137S3ST-VB is suitable for high-frequency switching circuits such as inverters and power factor correction (PFC) modules. These applications require MOSFETs to operate stably at high frequencies while maintaining low power losses.
HUF76137S3ST-VB MOSFET is widely used in the following fields and modules:
1. **High-efficiency power management**: Due to its ultra-low on-resistance and high current handling capability, HUF76137S3ST-VB is ideal for high-efficiency power management modules such as DC-DC converters and switching power supplies. This MOSFET can significantly reduce energy loss, improve conversion efficiency, and perform stably under high load conditions.
2. **Motor control system**: In motor control applications, the high current capability and low on-resistance of HUF76137S3ST-VB make it suitable for motor drive circuits. It is able to switch quickly and provide stable current output, which is suitable for various motor control systems such as electric vehicles and industrial drive systems.
3. **Automotive electronic systems**: In automotive electronic systems, HUF76137S3ST-VB can be used in various applications, including battery management systems, on-board chargers, and electronic stability programs. Its high voltage resistance and high current handling capabilities enable it to cope with the high power demands and harsh conditions in the automotive environment.
4. **High-frequency switching circuit**: Thanks to the fast switching characteristics brought by Trench technology, HUF76137S3ST-VB is suitable for high-frequency switching circuits such as inverters and power factor correction (PFC) modules. These applications require MOSFETs to operate stably at high frequencies while maintaining low power losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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