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HUF75343S3ST-VB Product details
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Product Introduction
**HUF75343S3ST-VB** is a high current, high performance single N-channel MOSFET in a TO-263 package. The device is designed for high current and low on-resistance applications, and can operate stably at a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is only 4mΩ at VGS=10V, providing extremely low conduction losses and supporting a maximum drain current (ID) of up to 150A. HUF75343S3ST-VB uses advanced Trench technology to ensure excellent switching performance and reliability, making it an ideal choice for a variety of high-power, high-efficiency applications.
**HUF75343S3ST-VB** is a high current, high performance single N-channel MOSFET in a TO-263 package. The device is designed for high current and low on-resistance applications, and can operate stably at a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is only 4mΩ at VGS=10V, providing extremely low conduction losses and supporting a maximum drain current (ID) of up to 150A. HUF75343S3ST-VB uses advanced Trench technology to ensure excellent switching performance and reliability, making it an ideal choice for a variety of high-power, high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description
1. **Model**: HUF75343S3ST-VB
2. **Package type**: TO-263
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 60V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 3V
7. **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 150A
9. **Technology**: Trench
1. **Model**: HUF75343S3ST-VB
2. **Package type**: TO-263
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 60V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 3V
7. **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 150A
9. **Technology**: Trench
Domain and module applications：
Applications and modules
**HUF75343S3ST-VB** Due to its extremely low on-resistance and high current capability, it is particularly suitable for the following areas and modules:
1. **High-efficiency power management**: In switching power supplies and DC-DC converters, HUF75343S3ST-VB can effectively reduce conduction losses and improve conversion efficiency. It is widely used in applications that require high-efficiency power management, such as computer power supplies, data center power supplies, and industrial power systems.
2. **Motor drive system**: This MOSFET performs well in motor control modules and is suitable for motor drives in high-power power tools, electric vehicles, and industrial automation. Its high current handling capability ensures stable operation and efficient control of the motor.
3. **Power amplifier**: In audio power amplifiers and other high-power amplifier applications, HUF75343S3ST-VB provides efficient current transfer and low heat generation, and is suitable for power amplifier modules in high-performance audio systems and wireless communication equipment.
4. **LED drive and lighting system**: This MOSFET can provide efficient energy conversion and reliable drive control in LED drive circuits, and is widely used in LED lighting systems, intelligent lighting control and large-scale lighting solutions.
**HUF75343S3ST-VB** can meet various high-power and high-efficiency application requirements and provide reliable solutions through its excellent electrical performance and efficient operation capabilities.
**HUF75343S3ST-VB** Due to its extremely low on-resistance and high current capability, it is particularly suitable for the following areas and modules:
1. **High-efficiency power management**: In switching power supplies and DC-DC converters, HUF75343S3ST-VB can effectively reduce conduction losses and improve conversion efficiency. It is widely used in applications that require high-efficiency power management, such as computer power supplies, data center power supplies, and industrial power systems.
2. **Motor drive system**: This MOSFET performs well in motor control modules and is suitable for motor drives in high-power power tools, electric vehicles, and industrial automation. Its high current handling capability ensures stable operation and efficient control of the motor.
3. **Power amplifier**: In audio power amplifiers and other high-power amplifier applications, HUF75343S3ST-VB provides efficient current transfer and low heat generation, and is suitable for power amplifier modules in high-performance audio systems and wireless communication equipment.
4. **LED drive and lighting system**: This MOSFET can provide efficient energy conversion and reliable drive control in LED drive circuits, and is widely used in LED lighting systems, intelligent lighting control and large-scale lighting solutions.
**HUF75343S3ST-VB** can meet various high-power and high-efficiency application requirements and provide reliable solutions through its excellent electrical performance and efficient operation capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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