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HM35P03D-VB Product details

Product introduction:

1. Product Introduction

HM35P03D-VB is a high-performance P-channel MOSFET using Trench technology and packaged in DFN8 (5x6). With a drain-source voltage (V_DS) of -30V and a drain current (I_D) of up to -60A, the device is particularly suitable for low-voltage, high-current switching applications. Its low on-resistance of 12mΩ @ V_GS = 4.5V and 7.8mΩ @ V_GS = 10V ensures low power consumption and high efficiency at high current. The DFN8 package of HM35P03D-VB provides excellent thermal performance and compact size, making it suitable for applications with space constraints and high heat dissipation efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -2.5V -60A 7.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P
2. Detailed parameter description

- **Model**: HM35P03D-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single-channel P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2.5V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 4.5V
- 7.8mΩ @ V_GS = 10V
- **Drain current (I_D)**: -60A
- **Process technology**: Trench technology
- **Package size**: DFN8 (5x6), suitable for high power density applications
- **Operating temperature range**: -55°C to +150°C (please refer to the data sheet for details)
- **Pin configuration**: Standard DFN8 pin layout for easy integration and design

Domain and module applications:

3. Application fields and module examples

The design features of HM35P03D-VB make it excel in the following fields and modules:

1. **Power management**:
- **Application examples**: Used in synchronous rectifiers in power management modules to improve power conversion efficiency.
- **Features**: Its low on-resistance and high current capability provide efficient power conversion in low-voltage and high-current applications.

2. **Load switch**:
- **Application examples**: Used as a load switch in battery-powered devices to control the flow of current to different modules or devices.
- **Features**: The P-channel characteristics make it suitable for load switching applications, providing fast switching performance and low power consumption.

3. **Motor control**:
- **Application examples**: Used as a switching element in low-voltage motor drive circuits to control the start, stop and speed regulation of the motor.
- **Features**: High current handling capability and low on-resistance ensure efficiency and stability of motor drive, suitable for small motor control in various portable devices.

4. **DC-DC Converter**:
- **Application Example**: Used as a P-channel switch in a DC-DC step-down converter to control the stability and response speed of the output voltage.
- **Features**: Its low R_DS(ON) and high current capability ensure efficient operation and low heat generation of the converter.

5. **Portable Devices**:
- **Application Example**: Used as a power switch in portable devices such as smartphones and tablets to manage the power consumption of the device and extend battery life.
- **Features**: The compact DFN8 package and high current capability make it ideal for use in portable applications with limited space and high power density.

6. **Protection Circuit**:
- **Application Example**: Used in electronic protection circuits to prevent reverse current and voltage overshoot, protecting sensitive components from damage.
- **Features**: The characteristics of P-channel MOSFET make it excel in reverse current protection and can respond quickly to overvoltage conditions.

With its excellent low on-resistance and high current handling capability, HM35P03D-VB excels in a variety of applications requiring efficient power management and load control, and is particularly suitable for modern electronic devices with limited space and high power density requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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