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HM30P10L-VB Product details
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HM30P10L-VB MOSFET Product Introduction
**HM30P10L-VB** is a high-performance P-channel MOSFET in TO251 package. It is designed using Trench technology and is designed for high current and low on-resistance applications. The drain-source withstand voltage of this MOSFET is -100V, which is suitable for medium negative voltage applications. Its on-resistance is 33mΩ at VGS=10V, and its drain current capability is up to -40A, which can work stably in high current environments. The threshold voltage is -2V, ensuring reliable switching under common gate voltages.
**HM30P10L-VB** is a high-performance P-channel MOSFET in TO251 package. It is designed using Trench technology and is designed for high current and low on-resistance applications. The drain-source withstand voltage of this MOSFET is -100V, which is suitable for medium negative voltage applications. Its on-resistance is 33mΩ at VGS=10V, and its drain current capability is up to -40A, which can work stably in high current environments. The threshold voltage is -2V, ensuring reliable switching under common gate voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -40A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
HM30P10L-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single-P-Channel
- **Drain-source withstand voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -40A
- **Technology type**: Trench
- **Package type**: TO251
- **Configuration**: Single-P-Channel
- **Drain-source withstand voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -40A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Power management module**: The low on-resistance and high current capability of the HM30P10L-VB make it very suitable for use in power management modules. For example, it can be used as a negative power switch to control the switching and distribution of power to provide stable power management for the system.
2. **Load switch**: In load switch applications, this MOSFET can be used to control the switching of loads at negative voltages. Due to its low on-resistance and high drain current capability, it can effectively switch high current loads, such as used as a battery protection switch in battery management systems.
3. **DC-DC converter**: In DC-DC converter applications, the HM30P10L-VB can be used as a negative switching element to handle switching operations of medium voltages and currents. Its low on-resistance helps reduce power consumption during the conversion process and improve system efficiency.
4. **Motor control**: In motor control systems, this MOSFET can be used to control the load switching of motors. Its high current capability and good switching performance ensure the stability and reliability of the motor in operation, and is suitable for applications such as electric vehicles or power tools.
HM30P10L-VB MOSFET, with its high current carrying capacity and low on-resistance, is widely used in power management modules, load switches, DC-DC converters and motor control applications, providing a stable and efficient solution for high current switching in negative voltage environments.
1. **Power management module**: The low on-resistance and high current capability of the HM30P10L-VB make it very suitable for use in power management modules. For example, it can be used as a negative power switch to control the switching and distribution of power to provide stable power management for the system.
2. **Load switch**: In load switch applications, this MOSFET can be used to control the switching of loads at negative voltages. Due to its low on-resistance and high drain current capability, it can effectively switch high current loads, such as used as a battery protection switch in battery management systems.
3. **DC-DC converter**: In DC-DC converter applications, the HM30P10L-VB can be used as a negative switching element to handle switching operations of medium voltages and currents. Its low on-resistance helps reduce power consumption during the conversion process and improve system efficiency.
4. **Motor control**: In motor control systems, this MOSFET can be used to control the load switching of motors. Its high current capability and good switching performance ensure the stability and reliability of the motor in operation, and is suitable for applications such as electric vehicles or power tools.
HM30P10L-VB MOSFET, with its high current carrying capacity and low on-resistance, is widely used in power management modules, load switches, DC-DC converters and motor control applications, providing a stable and efficient solution for high current switching in negative voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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