Featured Model

Last updated:

HM18N70F-VB Product details

Product introduction:

HM18N70F-VB MOSFET Product Introduction

HM18N70F-VB is a single N-channel MOSFET in TO220F package. It is designed for high voltage and medium current switching applications, with a maximum drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V. The turn-on threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 450mΩ at VGS=10V, and the maximum drain current (ID) is 11A. HM18N70F-VB adopts SJ_Multi-EPI technology, has good electrical performance and stability, and is particularly suitable for high voltage and medium current applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 3.5V 11A 450mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 700V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 700V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
HM18N70F-VB MOSFET Detailed parameter description

- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Switching characteristics**: Suitable for high voltage and medium current switching applications
- **Package**: TO220F, suitable for applications with high power and good heat dissipation requirements

Domain and module applications:

HM18N70F-VB MOSFET Applicable fields and modules

The high voltage tolerance and moderate on-resistance of HM18N70F-VB MOSFET make it well-suited for the following fields and modules:

1. **High voltage power converter**: In power converters, HM18N70F-VB can be used as a high voltage switching element, suitable for voltage environments up to 700V, suitable for AC-DC converters and high voltage DC-DC converters, providing stable and efficient power conversion.

2. **Power inverter**: In power inverters, such as solar inverters, this MOSFET can be used to handle the conversion process of high voltage DC power, efficiently converting DC power into AC power, suitable for high power and high voltage applications.

3. **Industrial Power Management**: Used in industrial power management systems, HM18N70F-VB can handle high voltage and medium current, suitable for high voltage switch control and power protection, and improve system reliability and stability.

4. **Switching Power Supply (SMPS)**: In switching power supply systems, this MOSFET is suitable for high voltage switching operations, can efficiently manage and control high voltage power supplies, provide stable power output and efficient switching performance.

5. **Motor Drive**: In high voltage motor drive systems, HM18N70F-VB can handle high voltage switching operations, suitable for high power motor control, and ensure stable operation and efficient control of the motor.

The high voltage handling capability and good switching characteristics of HM18N70F-VB MOSFET enable it to perform well in applications requiring high voltage and high reliability, and is an ideal choice for high performance power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat