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FTD2002-VB Product details

Product introduction:

FTD2002-VB MOSFET Product Introduction

The FTD2002-VB is a high-efficiency dual N-Channel MOSFET in a TSSOP8 package with a common drain configuration. The device is suitable for a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is between 0.5V and 1.5V, and the on-resistance (RDS(ON)) is 32mΩ @ VGS=2.5V and 22mΩ @ VGS=4.5V. The FTD2002-VB uses Trench technology to provide excellent conduction performance and low conduction losses, making it suitable for space-constrained applications such as portable devices, power management, and low-voltage switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Common Drain-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Common Drain-N+N
Detailed parameter description

- **Package**: TSSOP8
- **Configuration**: Common drain dual N-Channel
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate-source voltage threshold (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology

Domain and module applications:

Applications and Modules

1. **Portable Devices**: The FTD2002-VB is ideal for power management modules in smartphones, tablets, and other portable electronic devices due to its low on-resistance and compact TSSOP8 package. It is able to provide efficient power switching and current control in a limited space.

2. **Power Management**: In power management systems, especially in applications that require multiple low-voltage conversions and regulation, the FTD2002-VB can be used in voltage regulators, load switches, and low-voltage conversion circuits to provide stable power distribution.

3. **Low-Voltage Switches**: The common-drain configuration of the FTD2002-VB makes it suitable for low-voltage switching circuits such as DC-DC converters and power switch controllers. In these applications, the device is able to efficiently switch and control current to ensure the reliability of the power system.

4. **Consumer Electronics**: Due to its good performance and small package size, FTD2002-VB is also suitable for various low-voltage applications in consumer electronics, such as home appliances, battery management systems, etc.

5. **Industrial Control**: In the field of industrial control, this MOSFET can be used in low-voltage drive and control circuits, especially in occasions where multiple parallel control signals are required, it can provide reliable low-loss switching control.

With its low on-resistance and efficient Trench technology, FTD2002-VB is particularly suitable for application scenarios that require compact design, efficient power management and low-voltage switching. It is widely used in many fields such as portable devices, power management, low-voltage switching, consumer electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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