FTD2002-VB Product details
Product introduction:
The FTD2002-VB is a high-efficiency dual N-Channel MOSFET in a TSSOP8 package with a common drain configuration. The device is suitable for a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is between 0.5V and 1.5V, and the on-resistance (RDS(ON)) is 32mΩ @ VGS=2.5V and 22mΩ @ VGS=4.5V. The FTD2002-VB uses Trench technology to provide excellent conduction performance and low conduction losses, making it suitable for space-constrained applications such as portable devices, power management, and low-voltage switching.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
- **Package**: TSSOP8
- **Configuration**: Common drain dual N-Channel
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate-source voltage threshold (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
Domain and module applications:
1. **Portable Devices**: The FTD2002-VB is ideal for power management modules in smartphones, tablets, and other portable electronic devices due to its low on-resistance and compact TSSOP8 package. It is able to provide efficient power switching and current control in a limited space.
2. **Power Management**: In power management systems, especially in applications that require multiple low-voltage conversions and regulation, the FTD2002-VB can be used in voltage regulators, load switches, and low-voltage conversion circuits to provide stable power distribution.
3. **Low-Voltage Switches**: The common-drain configuration of the FTD2002-VB makes it suitable for low-voltage switching circuits such as DC-DC converters and power switch controllers. In these applications, the device is able to efficiently switch and control current to ensure the reliability of the power system.
4. **Consumer Electronics**: Due to its good performance and small package size, FTD2002-VB is also suitable for various low-voltage applications in consumer electronics, such as home appliances, battery management systems, etc.
5. **Industrial Control**: In the field of industrial control, this MOSFET can be used in low-voltage drive and control circuits, especially in occasions where multiple parallel control signals are required, it can provide reliable low-loss switching control.
With its low on-resistance and efficient Trench technology, FTD2002-VB is particularly suitable for application scenarios that require compact design, efficient power management and low-voltage switching. It is widely used in many fields such as portable devices, power management, low-voltage switching, consumer electronics and industrial control.
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