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FS70SMJ-03-VB Product details
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FS70SMJ-03-VB Product Introduction
FS70SMJ-03-VB is a high-performance N-Channel MOSFET in TO3P package, designed for high current and high efficiency applications. This MOSFET uses Trench technology and can operate stably in high current and high power density environments. Its maximum drain-source voltage (VDS) is 60V, and the allowable range of gate-source voltage (VGS) is ±20V. The gate threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) of FS70SMJ-03-VB is 5.4mΩ@VGS=10V, and it supports a maximum drain current (ID) of 150A. This makes FS70SMJ-03-VB excellent in applications that require high current handling and low power consumption.
FS70SMJ-03-VB is a high-performance N-Channel MOSFET in TO3P package, designed for high current and high efficiency applications. This MOSFET uses Trench technology and can operate stably in high current and high power density environments. Its maximum drain-source voltage (VDS) is 60V, and the allowable range of gate-source voltage (VGS) is ±20V. The gate threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate drive voltage. The on-resistance (RDS(ON)) of FS70SMJ-03-VB is 5.4mΩ@VGS=10V, and it supports a maximum drain current (ID) of 150A. This makes FS70SMJ-03-VB excellent in applications that require high current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | 5.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: FS70SMJ-03-VB
- **Package**: TO3P
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**: 5.4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: FS70SMJ-03-VB
- **Package**: TO3P
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**: 5.4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
FS70SMJ-03-VB MOSFET performs well in multiple high current and high power density applications, including:
1. **High Power Switching Power Supply**: In a switching power supply (SMPS), the low on-resistance and high current carrying capability of the FS70SMJ-03-VB make it ideal for use as the main switch device. It can provide efficient power conversion, reduce power losses, and improve the overall efficiency of the system.
2. **Electric Vehicle**: In the drive and battery management system of electric vehicles, the FS70SMJ-03-VB is able to handle high current and high power requirements. It is suitable for motor drive, battery switch control, and power conditioning modules to ensure system reliability and performance.
3. **Industrial Power Control**: In industrial automation equipment and high power power control systems, the high current handling capability and low on-resistance of the FS70SMJ-03-VB make it an ideal choice. It can be used in motor control, power management and power conditioning applications to improve the efficiency and stability of equipment.
4. **High-efficiency power management system**: In high-efficiency power management systems, such as UPS systems and power adapters, the FS70SMJ-03-VB can efficiently handle current switching tasks to ensure efficient and stable operation of the system.
These application scenarios take advantage of the high current handling capability and low on-resistance characteristics of the FS70SMJ-03-VB MOSFET to ensure reliable performance in a variety of high-power and high-efficiency environments.
FS70SMJ-03-VB MOSFET performs well in multiple high current and high power density applications, including:
1. **High Power Switching Power Supply**: In a switching power supply (SMPS), the low on-resistance and high current carrying capability of the FS70SMJ-03-VB make it ideal for use as the main switch device. It can provide efficient power conversion, reduce power losses, and improve the overall efficiency of the system.
2. **Electric Vehicle**: In the drive and battery management system of electric vehicles, the FS70SMJ-03-VB is able to handle high current and high power requirements. It is suitable for motor drive, battery switch control, and power conditioning modules to ensure system reliability and performance.
3. **Industrial Power Control**: In industrial automation equipment and high power power control systems, the high current handling capability and low on-resistance of the FS70SMJ-03-VB make it an ideal choice. It can be used in motor control, power management and power conditioning applications to improve the efficiency and stability of equipment.
4. **High-efficiency power management system**: In high-efficiency power management systems, such as UPS systems and power adapters, the FS70SMJ-03-VB can efficiently handle current switching tasks to ensure efficient and stable operation of the system.
These application scenarios take advantage of the high current handling capability and low on-resistance characteristics of the FS70SMJ-03-VB MOSFET to ensure reliable performance in a variety of high-power and high-efficiency environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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