中文
English
FQD2P25TF-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**FQD2P25TF-VB** is a high voltage P-Channel MOSFET in TO252 package, designed for applications requiring high voltage and medium current handling capability. Its drain-source voltage can reach -250V, which is very suitable for applications requiring high voltage reverse blocking. This MOSFET uses Trench technology, providing low on-resistance and excellent switching performance, suitable for a variety of power management and voltage conversion applications.
**FQD2P25TF-VB** is a high voltage P-Channel MOSFET in TO252 package, designed for applications requiring high voltage and medium current handling capability. Its drain-source voltage can reach -250V, which is very suitable for applications requiring high voltage reverse blocking. This MOSFET uses Trench technology, providing low on-resistance and excellent switching performance, suitable for a variety of power management and voltage conversion applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: FQD2P25TF-VB
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -250V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 1200mΩ (VGS = 4.5V)
- 1000mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**: -6A
- **Technology**: Trench
- **Model**: FQD2P25TF-VB
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -250V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 1200mΩ (VGS = 4.5V)
- 1000mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**: -6A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Reverse voltage protection circuit**: The high voltage and P-Channel configuration of FQD2P25TF-VB make it very suitable for use in reverse voltage protection circuits. It can effectively prevent current reverse flow and protect sensitive components and equipment from damage.
2. **Negative voltage power management**: In negative voltage power management systems, FQD2P25TF-VB can be used as a switching element to manage the on and off of negative voltage. Its high voltage withstand capability ensures reliable operation under negative voltage conditions.
3. **Current isolation circuit**: This MOSFET is suitable for current isolation circuits that require high voltage isolation. By controlling the gate voltage, FQD2P25TF-VB can effectively isolate and manage current flow under high voltage conditions.
4. **Power electronic equipment**: In power electronic equipment, especially those that require high voltage reverse blocking and current control, FQD2P25TF-VB provides a reliable solution. These devices include high voltage converters, inverters and protection circuits.
The high voltage withstand capability and low on-resistance of the FQD2P25TF-VB enable it to excel in a variety of high voltage and reverse blocking applications, providing an efficient and reliable current management solution.
1. **Reverse voltage protection circuit**: The high voltage and P-Channel configuration of FQD2P25TF-VB make it very suitable for use in reverse voltage protection circuits. It can effectively prevent current reverse flow and protect sensitive components and equipment from damage.
2. **Negative voltage power management**: In negative voltage power management systems, FQD2P25TF-VB can be used as a switching element to manage the on and off of negative voltage. Its high voltage withstand capability ensures reliable operation under negative voltage conditions.
3. **Current isolation circuit**: This MOSFET is suitable for current isolation circuits that require high voltage isolation. By controlling the gate voltage, FQD2P25TF-VB can effectively isolate and manage current flow under high voltage conditions.
4. **Power electronic equipment**: In power electronic equipment, especially those that require high voltage reverse blocking and current control, FQD2P25TF-VB provides a reliable solution. These devices include high voltage converters, inverters and protection circuits.
The high voltage withstand capability and low on-resistance of the FQD2P25TF-VB enable it to excel in a variety of high voltage and reverse blocking applications, providing an efficient and reliable current management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
