FQA7N80C_F109-VB Product details
Product introduction:
FQA7N80C_F109-VB is a high voltage N-channel MOSFET in a TO3P package designed for extremely high voltage applications. The device has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, making it suitable for use in environments requiring extremely high voltage and reliability. It has a threshold voltage of 3.5V, an on-resistance of 750mΩ (at a gate drive voltage of 10V), and a maximum drain current of 9A. The FQA7N80C_F109-VB uses SJ_Multi-EPI technology to improve performance and efficiency at high voltages, making it ideal for applications such as power conversion and power control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
The FQA7N80C_F109-VB MOSFET excels in applications that require high voltage and reliability, and is suitable for the following areas and modules:
- **High Voltage Power Supplies and Inverters**: This MOSFET is ideal for high voltage power supplies and inverter applications, such as solar inverters and uninterruptible power supply (UPS) systems. These systems often require components that can handle very high voltages to ensure efficient conversion of energy and reliable power supply.
- **Industrial Power Control Systems**: In the industrial field, the FQA7N80C_F109-VB can be used in high voltage power control systems such as motor drives and inverters. Its high withstand voltage capability and stable switching characteristics enable it to provide reliable power control in harsh industrial environments.
- **Lighting Systems**: This MOSFET is also suitable for high voltage lighting systems, such as high voltage gas discharge lamps (HID lamps) and LED drivers. These systems require high voltage switches to control the flow of current and ensure efficient lighting.
- **Power Management System**: FQA7N80C_F109-VB can be used in high voltage power management systems, such as power factor correction (PFC) circuits in power grids and other high voltage power electronic devices. It provides efficient current handling and power control in these applications.
The extremely high voltage and reliable performance of FQA7N80C_F109-VB make it an ideal choice in a variety of applications requiring high voltage and efficient current control.
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