Featured Model

Last updated:

FQA7N80C_F109-VB Product details

Product introduction:

FQA7N80C_F109-VB MOSFET Product Introduction

FQA7N80C_F109-VB is a high voltage N-channel MOSFET in a TO3P package designed for extremely high voltage applications. The device has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, making it suitable for use in environments requiring extremely high voltage and reliability. It has a threshold voltage of 3.5V, an on-resistance of 750mΩ (at a gate drive voltage of 10V), and a maximum drain current of 9A. The FQA7N80C_F109-VB uses SJ_Multi-EPI technology to improve performance and efficiency at high voltages, making it ideal for applications such as power conversion and power control.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
FQA7N80C_F109-VB MOSFET Detailed parameter description

- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and Modules

The FQA7N80C_F109-VB MOSFET excels in applications that require high voltage and reliability, and is suitable for the following areas and modules:

- **High Voltage Power Supplies and Inverters**: This MOSFET is ideal for high voltage power supplies and inverter applications, such as solar inverters and uninterruptible power supply (UPS) systems. These systems often require components that can handle very high voltages to ensure efficient conversion of energy and reliable power supply.

- **Industrial Power Control Systems**: In the industrial field, the FQA7N80C_F109-VB can be used in high voltage power control systems such as motor drives and inverters. Its high withstand voltage capability and stable switching characteristics enable it to provide reliable power control in harsh industrial environments.

- **Lighting Systems**: This MOSFET is also suitable for high voltage lighting systems, such as high voltage gas discharge lamps (HID lamps) and LED drivers. These systems require high voltage switches to control the flow of current and ensure efficient lighting.

- **Power Management System**: FQA7N80C_F109-VB can be used in high voltage power management systems, such as power factor correction (PFC) circuits in power grids and other high voltage power electronic devices. It provides efficient current handling and power control in these applications.

The extremely high voltage and reliable performance of FQA7N80C_F109-VB make it an ideal choice in a variety of applications requiring high voltage and efficient current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat